KEXIN 2SC1815

Transistors
IC
SMD Type
NPN Transistor
2SC1815
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
Power dissipation
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to Base Voltage
Parameter
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5
V
Collector Current to Continuous
IC
150
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Tj
125
Storage Temperature
Tstg
-55 to 125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
60
V
50
V
Collector to base breakdown voltage
VCBO
Ic= 100
Collector to emitter breakdown voltage
VCEO
Ic= 0.1mA, IB=0
Collector cut to off current
ICBO
VCB=60V, IE=0
0.1
A
Collector cut to off current
ICEO
VCE=50V, IB=0
0.1
A
Emitter cut to off current
IEBO
VEB= 5V, IC=0
0.1
A
hFE
VCE= 6V, IC= 2mA
DC current gain
A, IE=0
130
400
Collector to emitter saturation voltage
VCE(sat)
IC=100 mA, IB= 10mA
0.25
V
Base to emitter saturation voltage
VBE(sat)
IC=100 mA, IB= 10mA
1
V
Transition frequency
fT
VCE=10V, IC= 1mA,f=30MHz
80
MHz
hFE Classification
HF
Marking
Rank
hFE
L
130
H
200
200
400
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1
Transistors
IC
SMD Type
2SC1815
Typlcal Characteristics
Fig.1 Collector Emitter Voltage
Fig.3 Collector Current
Fig.5 Ambient Temperature
2
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Fig.2 Collector Current
Fig.4Collector Current
Fig.6 Emitter Current