KEXIN 2SC3233

Transistors
SMD Type
NPN Silicon Triple Diffused
2SC3233
+0.15
6.50-0.15
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
TO-252
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
High colletor Breakdown Voltage: VCEO=400V
+0.15
0.50 -0.15
+0.2
9.70 -0.2
tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.8A
3 .8 0
Excellent Switching Times
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
2
A
Base Current
IB
0.5
A
1
W
20
W
Total Power dissipation Ta = 25
PC
TC = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
collector cutoff current
ICBO
VCB=400V,IE=0
emitter cutoff current
IEBO
VEB=7V,IC=0
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=1mA,IC=0
500
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA,IB=0
400
V
VCE=5V,IC=0.1A
20
VCE=5V,IC=1A
8
DC current Gain
hFE
100
ìA
1
mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=0.1A,IB=0.2A
1
V
Base- Emitter Voltage
VBE(sat)
IC=0.1A,IB=0.2A
1.5
V
tr
1.0
ìs
tstg
2.5
ìs
tf
1
ìs
Switching time turn-0n time
Switching storage time
Switching fall time
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