KEXIN C5356

Transistors
SMD Type
Silicon NPN Triple Diffused Type
2SC5356
6.50
+0.2
5.30-0.2
+0.15
-0.15
+0.15
1.50 -0.15
TO-252
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
+0.15
4.60-0.15
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
High DC current gain: hFE = 15 (min) (IC = 0.15 A)
+0.28
1.50 -0.1
High collectors breakdown voltage: VCEO = 800 V
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Excellent switching times: tf = 0.5 ìs (max) (IC = 1.2 A)
3 .8 0
Features
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
900
V
Collector-emitter voltage
VCEO
800
V
Emitter-base voltage
V
VEBO
7
Collector current ( DC)
IC
3
Collector current (Pulse)
ICP
5
Base current
Collector power dissipation
IB
Ta = 25
PC
Junction temperature
A
W
25
TC = 25
Storage temperature range
1
1.5
A
Tj
150
Tstg
-55 to +150
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1
Transistors
SMD Type
2SC5356
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
ICBO
VCB = 720 V, IE = 0
100
ìA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
10
ìA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
900
V
Collector-emitter breakdown voltage
V (BR) CEO
V
DC current gain
hFE
Testconditons
Min
IC = 10 mA, IB = 0
800
VCE = 5 V, IC = 1 mA
10
VCE = 5 V, IC = 0.15 A
15
Typ
Collector-emitter saturation voltage
VCE (sat)
IC = 1.2 A, IB = 0.24 A
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 2 A, IB = 0.24 A
1.3
V
Switching time Rise time
Switching time Storage time
Switching time Fall time
Marking
Marking
2
Symbol
C5356
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tr
0.7
tstg
4.0
tf
0.5
ìs