KEXIN 2SC4616

Transistors
SMD Type
Silicon NPN Triple Diffused Type Transistor
2SC4616
6.50
+0.2
5.30-0.2
+0.15
-0.15
Features
+0.15
1.50 -0.15
TO-252
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
+0.15
4.60-0.15
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
400V)
+0.2
9.70 -0.2
High blocking voltage(VCEO
+0.15
0.50 -0.15
Large current calcity (IC=2A)
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
400
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
4
A
Collector current
IC
2
A
Collector power dissipation
PC
TC=25
1
W
15
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SC4616
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off Current
Parameter
Symbol
ICBO
VCB=300V,IE=0
Testconditons
1
ìA
Emitter Cut-off Current
IEBO
VEB=4V,IC=0
1
ìA
DC Current Gain
hFE
VCE=10V,IC=100mA
Gain-Bandwidth product
fT
VCE=10V,IC=100mA
C-E Saturation Voltage
VCE(sat)
IC=500mA,IB=50mA
1
V
B-E Saturation Voltage
VBE(sat)
IC=500mA,IB=50mA
1
V
C-B Breakdown Voltage
V(BR)CBO
IC=10ìA,IE=0
400
V
C-E Breakdown Voltage
V(BR)CEO
IC=1mA,RBE=
400
V
E-B Breakdown Voltage
V(BR)EBO
IE=10ìA,IC=0
5
V
VCB=30V,f=1MHz
Typ
40
200
60
15
Output capacitance
cob
Turn-ON Time
ton
0.085
Storage Time
tstg
4
tr
0.6
Fall Time
hFE Classification
2
Min
TYPE
C
D
E
hFE
40 to 80
60 to 120
100 to 200
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MHz
pF
ìs