KEXIN 2SA1611

Transistors
IC
SMD Type
PNP Silicon Epitaxia
2SA1611
Features
High DC Current Gain.
High Voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -60V, IE=0
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -5V, IC=0
-0.1
ìA
hFE
VCE = -6V , IC = -1mA
DC current gain *
Collector-emitter saturation voltage
VCE(sat) IC = -100mA , IB = -10mA
Base-emitter voltage
Gain bandwidth product
Output capacitance
* Pulse test: tp
Min
90
Typ
200
600
-0.18
-0.3
V
VBE
VCE = -6V , IC = 1mA
-0.58 -0.62 -0.68
V
fT
VCE = -6V , IE = 10mA
180
MHz
VCB = -10V , IE = 0 , f = 1.0MHz
4.5
pF
Cob
300 ìs; d
Testconditons
0.02.
hFE Classification
Marking
M4
hFE
90 180
M5
135
270
M6
200
400
M7
300
600
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