KEXIN 2SD1611

Transistors
SMD Type
Silicon NPN Triple Diffusion Planar Type Darlington
2SD1611
TO-252
+0.15
1.50 -0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
+0.15
4.60-0.15
0.127
max
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
+0.25
2.65 -0.1
High collector-base voltage (Emitter open) VCBO
+0.28
1.50 -0.1
+0.2
9.70 -0.2
High forward current transfer ratio hFE
+0.15
0.50 -0.15
Features
1 Base
2 Collector
3 Emitter
Internal Connection
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
500
V
Collector-emitter voltage (Base open)
VCEO
400
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
6
A
Peak collector current
ICP
10
A
40
A
1.3
W
Collector power dissipation
PC
Ta = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SD1611
Electrical Characteristics Ta = 25
Parameter
Testconditons
IE = 0.1 A, IC = 0
Emitter-base voltage (Collector open)
VEBO
Collector-emitter sustaining voltage*
VCEO(SUS)
IC = 2 A, L = 10 mH
Collector-base cutoff current (Emitter open)
ICBO
VCB = 350 V, IE = 0
Forward current transfer ratio
hFE
VCE = 2 V, IC = 2 A
Collector-emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 0.06 A
Base-emitter saturation voltage
VBE(sat)
IC = 3 A, IB = 0.06 A
Transition frequency
*. VCEO(SUS) Test circuit
2
Symbol
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fT
VCE = 10 V, IC = 1 A, f = 1 MHz
Min
Typ
Max
Unit
5
V
400
V
100
ìA
1.5
V
500
2.5
15
V
MHz