Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1614 Features World standard miniature package. High dc current gain. Low VCE(sat). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current (DC) IC 2 A Collector Current (pulse) * IC 3 A Total power dissipation PT 2.0 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pulse Test PW 10ms, Duty Cycle 50%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 30 V, IE = 0 A Emitter cutoff current IEBO VEB = 6.0 V, IC = 0 A DC current gain * hFE VCE = 2.0 V, IC = 100 mA Collector saturation voltage * VCE(sat) IC = 2 A, IB = 50 mA Base saturation voltage * VBE(sat) IC = 2 A, IB = 50 mA Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 135 650 Typ Max Unit 100 nA 100 nA 350 600 0.3 0.5 V 0.95 1.2 V 680 750 mV VBE VCE = 6.0 V, IC = 100 mA fT VCE = 10 V, IE = -50 mA 200 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 28 pF Cob 350 ìs, duty cycle Min 2% hFE Classification Marking XM XL XK hFE 135 270 200 400 300 600 www.kexin.com.cn 1