KEXIN 2SC4180

Transistors
SMD Type
NPN Silicon Epitaxial Transistor
2SC4180
Features
Small dimension
High DC current gain
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = 120V, IE=0
Emitter cutoff current
IEBO
VEB = 5V, IC=0
DC current gain
hFE
Min
Typ
VCE = 6V , IC = 1mA*
135
600
VCE = 6V , IC = 0.1mA
100
580
VCE(sat) IC = 10mA , IB = 1mA
Max
Unit
0.05
ìA
0.05
ìA
900
0.07
0.3
V
Base-emitter voltage *
VBE
VCE =6V , IC = 1mA
0.55
0.59
0.65
V
Gain bandwidth product
fT
VCE = 6V , IE = -1mA
50
110
Collector-emitter saturation voltage *
Output capacitance
* Pulse test: tp
Cob
350 ìs; d
VCB = 30V , IE = 0 , f = 1.0MHz
1.6
MHz
2.5
pF
0.02.
hFE Classification
Marking
D15
D16
D17
D18
hFE
135 270
200 400
300 600
450 900
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