Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB799 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE(sat)<-0.4V(IC=-500mA,IB=-50mA) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V Emitter to base voltage VEBO -5 V Collector current IC -0.7 A Collector current(Pulse) * IC -1.0 A Total power dissipation PT 2 W Junction temperature Tj 150 Tstg -55 to +150 Storage temperature range * PW 10ms,duty cycle 50%. Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -60 V, IE = 0 Testconditons Min Typ -100 nA Emitter cutoff current IEBO VEB = -5.0 V, IC = 0 -100 nA DC current gain * hFE VCE = -1.0 V, IC = -100 mA 90 200 VCE = -1.0 V, IC = -500 mA 50 120 400 Collector saturation voltage * VCE(sat) IC = -500mA, IB = -50mA -0.16 -0.4 V Base saturation voltage * VBE(sat) IC = -500mA, IB = -50mA -0.9 -1.2 V -630 -700 mV Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW VBE VCE = -6.0 V, IC = -10 mA fT VCE = -6.0 V, IE = 10 mA 120 MHz VCB = -6.0 V, IE = 0 , f = 1.0 MHz 25 pF Cob 350 ìs, duty cycle -600 2% hFE Classification Marking MM ML MK hFE 90 180 135 270 200 400 www.kexin.com.cn 1