KEXIN 2SD992-Z

Transistors
SMD Type
NPN Silicon Epitaxial Transistor
2SD992-Z
TO-252
2.3
+0.1
0.60-0.1
0.127
max
3 .8 0
+0.15
5.55 -0.15
+0.15
1.50 -0.15
+0.1
0.80-0.1
2.30
+0.8
0.50-0.7
+0.25
2.65 -0.1
+0.2
9.70 -0.2
Low VCE(sat).
Unit: mm
+0.1
-0.1
+0.28
1.50 -0.1
6.50
+0.2
5.30-0.2
+0.15
-0.15
+0.15
0.50 -0.15
Features
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
2
A
Collector Current (pulse) *
ICP
3
A
Total power dissipation
PT
2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pulse Test PW
10ms, Duty Cycle
50%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain *
hFE
Testconditons
Min
Typ
VCB = 20 V, IE = 0
VCE = 0.5 V, IC = 0.1 A
35
VCE = 0.5 V, IC = 2.0 A
50
Max
Unit
10
nA
200
Collector saturation voltage *
VCE(sat) IC = 2.0 A, IB = 40 mA
0.3
0.5
V
Base saturation voltage *
VBE(sat) IC = 2.0 A, IB = 40 mA
0.95
1.5
V
* Pulsed: PW
350 ìs, duty cycle
2%
hFE Classification
Marking
N
M
L
K
hFE
35 80
60 120
80 120
100 200
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