IC MOSFET SMD Type SMDType MOS Field Effect Transistor 2SJ461 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 high input impedance. 0.55 Not necessary to consider driving current because of its +0.1 1.3-0.1 +0.1 2.4-0.1 Can be driven by a 2.5V power source. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Possible to reduce the number of parts by omitting the bias resistor. 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS -50 V Gate to source voltage VGSS 7.0 V ID 0.1 A Drain current (DC) Drain current(pulse) * ID Power dissipation PD 200 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s; d 0.2 A mW 1%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain to source breakdown voltage VDSS ID=-10mA,VGS=0 Gate to source breakdown voltage VGSS IG = Drain cut-off current IDSS VDS=-50V,VGS=0 Gate leakage current IGSS VGS= Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Yfs RDS(on) Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time Turn-off delay time Fall time Typ Max -20 A ,VDS=0 V A 10 A -1.3 VGS=-2.5V,ID=-3mA 46 100 VGS=-4.0V,ID=-10mA 31 50 VDS=-3.0V,ID=-10mA -0.7 -100 -0.9 A Unit V 10 7.0V,VDS=0 VGS(off) VDS=-3.0V,ID=-1 Input capacitance Rise time 200 Min 12 V ms 6 pF 9 pF 1.6 pF td(on) 32 ns tr 270 ns 45 ns 130 ns td(off) tf VDS=-3.0V,VGS=0,f=1MHZ VDD=-3.0V,VGS(on)=-3.0V,ID=--20mA RL=200 ,RG=10 www.kexin.com.cn 1