KEXIN 2SK3560

Transistors
IC
SMD Type
Silicon N-channel power MOSFET
2SK3560
1 .2 7 -0+ 0.1.1
TO-263
Features
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
For high-speed switching
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
High avalanche resistance
5 .6 0
Low on-resistance, low Qg
+0.2
0.4-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
230
V
Gate-source surrender voltage
VGSS
30
V
Drain current
ID
30
A
Peak drain current
IDP
120
A
Power dissipation Ta = 25
PD
Power dissipation
3
W
50
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
www.kexin.com.cn
1
Transistors
IC
SMD Type
2SK3560
Electrical Characteristics Ta = 25
Parameter
Testconditons
Gate-drain surrender voltage
VDSS
ID = 1 mA, VGS = 0
IDR = 30 A, VGS = 0
Diode forward voltage
VDSF
Gate threshold voltage
Vth
VDS = 25 V, ID = 1 mA
Drain-source cutoff current
IDSS
VDS = 184 V, VGS = 0
IGSS
VGS =
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Yfs
Short-circuit forward transfer capacitance
Ciss
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Turn-off delay time
Min
tr
2
55
8
Unit
-1.5
V
4
V
100
ìA
1
ìA
74
mÙ
19
S
2 330
pF
356
pF
44
pF
100 V, ID = 15 A
39
ns
6.7 Ù, VGS = 10 V
37
ns
221
ns
46
ns
164
ns
VDS = 25 V, VGS = 0, f = 1 MHz
RL
Max
V
30 V, VDS = 0
VDS = 25 V, ID = 15 A
VDD
Typ
230
RDS(on) VGS = 10 V, ID = 15 A
Short-circuit output capacitance
Rise time
td(off)
Fall time
tf
Reverse recovery time
trr
L = 230 ìH, VDD = 100 V
Reverse recovery charge
Qrr
IDR = 15 A, di /dt = 100 A/ ìs
853
nC
Total gate charge
Qg
VDD = 100 V, ID = 25 A
51.2
nC
Gate-source charge
Qgs
VGS = 10 V
8.2
nC
Gate-drain charge
2
Symbol
Qgd
19.4
nC
Channel-case heat resistance
Rth(ch-c)
2.5
/W
Channel-atmosphere heat resistance
Rth(ch-a)
89.2
/W
www.kexin.com.cn