KEXIN FMMT2484

Transistors
IC
SMD Type
Small Signal Transistor
FMMT2484
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
60 Volt VCEO.
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
6
V
Peak collector current
ICM
200
mA
Collector current
IC
50
mA
Power dissipation
Ptot
330
mW
Tj,Tstg
-55 to +150
Operating and storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=10ìA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA,IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO IE=10ìA,IC=0
6
V
Collector cutoff current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage *
VCB=45V,IE=0
10
nA
VCB=45V,TamB=150
10
ìA
VEB=5V,IC=0
10
nA
0.35
V
0.95
V
VCE(sat) IC=1A,IB=100ìA
Base-emitter voltage *
VBE
DC current gain *
hFE
IC=10ìA,VCE=5V
Output capacitance
Cobo
VCB=5V,f=140KHz
6
pF
Input capacitance
Cibo
Output capacitance
* Pulse test: tp
NF
300ìs; d
IC=1A,VCE=5V
100
500
VBE=0.5V,f=140KHz
6
pF
IC=200ìA, VCE=5V, Rg=2kÙ
f=1kHz, f=200Hz
3
dB
IC=200ìA, VCE=5V, Rg=2kÙ
f=30Hz to 15kHz at -3dB points
3
dB
0.02.
Marking
Marking
4G
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