IC IC MOSFET SMD Type Product specification KRF7603 Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Continuous Drain Current, VGS @ 4.5V,TA = 25 ID 5.6 Continuous Drain Current, VGS @ 4.5V,TA = 70 ID 4.5 Pulsed Drain Current*1 IDM 30 PD 1.8 Power Dissipation Ta = 25 *1 Linear Derating Factor 14 Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range dv/dt 5 TJ, TSTG -55 to + 150 R JA 70 Junction-to-Ambient *2 * ISD 3.7A, di/dt 130A/ s, VDD *2 Surface mounted on FR-4 board, t http://www.twtysemi.com V(BR)DSS,TJ 20 Unit A W W/ V V/ns /W 150 10sec. [email protected] 4008-318-123 1of 2 IC IC MOSFET SMD Type Product specification KRF7603 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance Gate-to-Source Forward Leakage Total Gate Charge V 0.035 VGS = 4.5V, ID =1.9A*1 0.060 gfs VDS = 10V, ID = 1.9A*1 4.3 V S VDS = 24V, VGS = 0V 1.0 VDS = 24V, VGS = 0V, TJ = 125 25 VGS = -20V -100 VGS = 20V 100 Qg ID = 3.7A 18 Gate-to-Source Charge Qgs VDS = 24V 2.4 3.6 Qgd VGS = 10V,*1 5.6 8.4 Turn-On Delay Time td(on) VDD = 15V 5.7 tr ID = 3.7A 28 td(off) RG =6.2 18 tf RD = 4.0 12 Input Capacitance Ciss VGS = 0V 520 Output Capacitance Coss VDS = 25V 200 Reverse Transfer Capacitance Crss ƒ= 1.0MHz 80 Turn-Off Delay Time Fall Time Continuous Source Current Body Diode) A nA 27 Gate-to-Drain ("Miller") Charge Rise Time Unit V/ VGS = 10V, ID = 3.7A*1 1.0 Gate-to-Source Reverse Leakage Max 0.029 VDS = VGS, ID = 250 A IGSS Typ 30 ID = 1mA,Reference to 25 VGS(th) IDSS Drain-to-Source Leakage Current VGS = 0V, ID = 250 A TJ Min nC ns pF IS 1.8 ISM 30 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD 1.2 V Reverse Recovery Time trr TJ = 25 , IF = 3.7A.VR=10V 53 80 ns Reverse RecoveryCharge Qrr di/dt = 100A/ 87 130 nC *1 Pulse width 300µs; duty cycle TJ = 25 , IS = 3.7A, VGS = 0V*1 s*1 2%. *2 Repetitive rating; pulse width limited bymax http://www.twtysemi.com [email protected] 4008-318-123 2 of 2