Transistors SMD Type NPN Medium Frequency Transistor KFS20(BFS20) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 25 mA) 0.4 3 Features 1 Very low feedback capacitance (typ. 350 fF). 0.55 Low voltage (max. 20 V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 4 V IC 25 mA ICM 25 mA Collector current Peak collector current power dissipation PD 250 mW Rth j-a 500 K/W Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Collector cutoff current Symbol Testconditons ICBO IE = 0; VCB = 20 V Min Typ Max Unit 100 nA ICBO IE = 0; VCB = 20 V; Tj = 100 10 A Emitter cutoff current IEBO IC = 0; VEB = 4V 100 nA DC current gain hFE IC = 7mA; VCE = 10 V 900 mV Base to emitter voltage VBE IC = 7 mA; VCE = 10V Collector capacitance CC IE = ie = 0; VCB = 10 V; f = 1 MHz Freedback capacitance Cre IC=0,VCB=10V,f=1MHz Transition frequency fT IC =5mA; VCE =10 V; f = 100 MHz 40 85 740 275 1 pF 350 pF 450 MHz Marking Marking G1 www.kexin.com.cn 1