IC IC SMD Type Power MOSFET 2 Am, 30 V KMDF2C03HD Features Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive ? Can Be Driven by Logic ICs Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Drain current Pulsed *1 Operating and Storage Temperature Range Total power dissipation Thermal Resistance ? Junction to Ambient Single Pulse Drain?to?Source Avalanche N-Channel P-Channel 30 4.1 IDM 21 TJ, Tstg -55 to 150 PD 2 R V 3 A 15 A W 62.5 JA EAS V 20 ID 324 *2 Unit /W 324 *3 mJ Energy - Starting TJ = 25 *1 Pw 10 s, Duty cycle 1% *2 VDD = 30 V, VGS = 5.0 V, Peak IL = 9.0,Apk, L = 8.0 mH, RG = 25 *3 VDD = 30 V, VGS = 5.0 V, Peak IL = 6.0,Apk, L = 18 mH, RG = 25 www.kexin.com.cn 1 IC IC SMD Type KMDF2C03HD Electrical Characteristics Ta = 25 Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current IGSS VGS= 20V,VDS=0V V(BR) DSS ID=250 A,VGS=0V IDSS Gate threshold voltage *1 VGS (th) Static drain-source on-state resistance *1 RDS (on) Static drain-source on-state resistance *1 RDS (on) Forward Transconductance gFS Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td (on) Rise time Turn-off delay time *1 Fall time *1 Turn-on delay time *1 Rise time *1 Turn-off delay time *1 Fall time *1 Total Gate Charge *2 Testconditons Symbol tr td (off) tf td (on) tr td (off) tf QT VDS=30V,VGS=0V VDS = VGS, ID = 250 A ID=3.0A,VGS=10A ID=1.5A,VGS=4.5V ID=2.0A,VGS=10V ID=1.0A,VGS=4.5V Q1 Q2 Gate?Drain Charge *2 Q3 2 www.kexin.com.cn Typ Max N-Ch 100 P-Ch 100 N-Ch 30 P-Ch 30 N-Ch 1 P-Ch 1 N-Ch 1.0 1.7 3.0 P-Ch 1.0 1.5 2.0 0.06 0.070 0.17 0.200 N-Ch nA A V 0.065 0.075 P-Ch 0.225 0.300 N-Ch 2.0 3.6 ID=1.0A,VDS=3V P-Ch 2.0 3.4 N-Channel N-Ch 450 630 VDS=24V,VGS=0V,f=1MHz P-Ch 397 550 S N-Ch 160 225 P-Channel P-Ch 189 250 VDS=24V,VGS=0V,f=1MHz N-Ch 35 70 P-Ch 64 126 ID=3.0A,VDD=15V N-Ch 12 24 ID=2.0A,VDD=-15V P-Ch 16 32 N-Channel N-Ch 65 130 VGS=4.5V,RG=9.1 P-Ch 18 36 N-Ch 16 32 P-Channel P-Ch 63 126 VGS=4.5V,,RG=6.0 N-Ch 19 38 P-Ch 194 390 ID=3.0A,VDD=15V N-Ch 8.0 16 ID=2.0A,VDD=-15V P-Ch 9.0 18 N-Channel N-Ch 15 30 VGS=10V,RG=9.1 P-Ch 10 20 N-Ch 30 60 P-Channel P-Ch 81 162 VGS=10V,,RG=6.0 N-Ch 23 46 P-Ch 192 384 N-Ch 11.5 16 19 N-Channel Unit V ID=1.5A,VDS=3.0V P-Ch 14.2 N-Ch 1.5 P-Channel P-Ch 1.1 VDS = 24 V, ID = 2.0 A,VGS=10V N-Ch 3.5 VDS=10V,ID=3.0A,VGS=10 V Gate?Source Charge *2 Min P-Ch 4.5 N-Ch 2.8 P-Ch 3.5 pF pF pF ns ns ns ns ns ns ns ns nC IC IC SMD Type KMDF2C03HD Electrical Characteristics Ta = 25 Parameter Forward Voltage *1 Testconditons Symbol VSD Typ Max IS=3.0 A,VGS=0V N-Ch 0.82 1.2 IS=2.0 A,VGS=0 V P-Ch 1.82 2 N-Ch 24 P-Ch 42 N-Ch 17 P-Ch 16 trr Reverse Recovery Time ta IF = IS,dIS/dt = 100 A/ s tb Reverse Recovery Storage Charge *1 Pulse Test: Pulse Width 3 300 QRR s, Duty Cycle Min N-Ch 7 P-Ch 26 N-Ch 0.025 P-Ch 0.043 Unit V ns C 2%. *2 Switching characteristics are independent of operating junction temperature. www.kexin.com.cn 3