KEXIN KDB5690

Transistors
IC
SMD Type
N-Channel PowerTrenchTMMOSFET
KDB5690
1 .2 7 -0+ 0.1.1
TO-263
Features
@ VGS = 10 V
5 .2 8 -0+ 0.2.2
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High performance trench technology for extremely low RDS(ON).
0.1max
+0.1
1.27-0.1
elevated temperature.
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
maximum junction temperature rating.
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
5 .6 0
@ VGS = 6 V
Critical DC electrical parameters specified at
175
+0.2
4.57-0.2
2 .5 4 -0+ 0.2.2
RDS(ON) = 0.032
+0.1
1.27-0.1
8 .7 -0+ 0.2.2
32 A, 60 V. RDS(ON) = 0.027
Unit: mm
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGS
Drain Current Continuous
ID
Drain Current Pulsed
Power dissipation @ TC=25
Derate above 25
Operating and Storage Temperature
20
32
V
A
100
A
PD
58
W
PD
0.4
TJ, TSTG
-65 to 175
W/
Thermal Resistance Junction to Case
R
JC
2.6
/W
Thermal Resistance Junction to Ambient
R
JA
62.5
/W
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1
Transistors
IC
SMD Type
KDB5690
Electrical Characteristics Ta = 25
Parameter
Symbol
Single Pulse Drain-Source Avalanche Energy *
W DSS
Maximum Drain-Source Avalanche Current
Drain–Source Breakdown Voltage
Min
Typ
IAR
BVDSS
Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = 250
ID = 250
A
Max
Unit
80
mJ
32
A
60
V
61
A, Referenced to 25
mV/
Zero Gate Voltage Drain Current
IDSS
VDS = 48 V, VGS = 0 V
1
Gate-Body Leakage, Forward
IGSSF
VGS = 20 V, VDS = 0 V
100
nA
Gate-Body Leakage, Reverse
IGSSR
VGS = -20 V, VDS = 0 V
-100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
4
V
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
On–State Drain Current
ID = 250
RDS(on)
ID(on)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
A
2
2.5
-6.4
A, Referenced to 25
mV/
VGS = 10 V, ID = 16 A
0.021 0.027
VGS = 10 V, ID = 16 A,TJ = 125
0.042 0.055
VGS = 6 V, ID =15 A,
0.024 0.032
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 16 A
VDS = 25 V, VGS = 0 V,f = 1.0 MHz
A
50
m
A
32
S
1120
pF
160
pF
Reverse Transfer Capacitance
Crss
80
Turn-On Delay Time
td(on)
10
18
ns
Turn-On Rise Time
tr
9
18
ns
Turn-Off Delay Time
td(off)
24
39
ns
10
18
ns
23
33
nC
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate–Source Charge
Qgs
Gate–Drain Charge
Qgd
Maximum Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
* Pulse Test: Pulse Width
2
Testconditons
VDD = 30 V, ID = 32A
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300 s, Duty Cycle
VDD = 30 V, ID = 1 A,VGS = 10 V, RGEN
=6 *
VDS = 1 V, ID = 16 A,VGS = 10 V *
3.9
nC
6.8
nC
IS
VSD
2.0%
VGS = 0 V, IS = 16 A *
pF
0.92
32
A
1.2
V