KEXIN KTA1660

Transistors
SMD Type
Epitaxial Planar PNP Transistor
KTA1660
Features
High Voltage: VCEO=-150V
High Transition Frequency:fT=120MHz
Small Flat Package
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Colletor-Base Voltage
Parameter
VCBO
-150
V
Colletor-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-50
mA
Base Current
IB
-10
mA
Colletor Power Dissipation
Junction Temperature
Storage Temperature Range
PC
500
mW
PC*
1
W
Tj
150
Tstg
-55 to 150
* mounted on ceramic substrate (250mm2X0.8t)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector Cut-off Current
ICBO
VCB=-150V,IE=0
-0.1
ìA
Emitter Cut-off Current
IEBO
VCE=-5V,IC=0
-0.1
ìA
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Colletor Output Capacitance
hFE
VCE=-5V,IC=-10mA
VCE(sat)
IC=-10mA,IB=-1mA
-0.8
V
VBE
VCE=-5V,IC=-30mA
-0.9
V
fT
VCE=-30V,IC=-10mA
120
VCB=-10V,IE=0,f=1MHz
4.0
Cob
70
240
MHz
5.0
pF
hFE Classification
Marking
BO
BY
Rank
O
Y
Type
70 140
120 240
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