IC IC SMD Type N-Channel Silicon MOSFET High Speed Switching KW306 Features High density mounting is possible because of the complex type which holds low-on-resistance,very-high-speed-switching and 4-volt-drive N-/P-channel/ MOSFETS Low ON-state resistance 1 : Source1 5 : Drain2 2 : Gate1 6 : Drain2 3 : Source2 7 : Drain1 4 : Gate2 8 : Drain1 Absolute Maximum Ratings Ta = 25 Symbol N-Channel P-Channel Unit Drain to Source Voltage Parameter VDSS 30 30 V Gate to Source Voltage VGSS Drain Current(DC) ID Drain Current(Pulse) *1 IDP Allowable power Dissipation *2 PD 25 32 V 3 A -32 A 1.7 W W Total Dissipation *2 PT 2.0 Channel Temperature Tch 150 Storage Temperature Tstg *1 PW 25 -55 to 150 10 S, dutycycle 1% *2 Mounted on ceramic board (1000mm2 X 0.8mm) 1unit www.kexin.com.cn 1 IC IC SMD Type KW306 Electrical Characteristics Ta = 25 Parameter Drain to Source Breakdown Voltage Symbol V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance VGS(off) | yfs | N-Ch 100 VDS=-30V , VGS=0 P-Ch -100 VGS= 20V , VDS=0 N-Ch 10 VGS= 20V , VDS=0 P-Ch 10 VDS=10V , ID=1mA N-Ch 1.0 2.5 VDS=-10V , ID=-1mA P-Ch -1.0 -2.5 VDS=10V , ID=5A N-Ch 5 8 VDS=-10V , ID=-3A P-Ch 3 5 RDS(on) 2 ID=-2A , VGS=-4V Turn-ON Delay Time td(on) Diode Forward Voltage VDS=30V , VGS=0 ID=-3A , VGS=-10V Crss Fall Time -30 RDS(on) 1 Reverse Transfer Capacitance Turn-OFF Delay Time P-Ch ID=2A , VGS=4V Coss tr 2 www.kexin.com.cn P-Ch S 65 m 110 160 m 200 320 m P-Ch 460 VDS=10V , f=1MHz N-Ch 340 VDS=-10V , f=1MHz P-Ch 350 VDS=10V , f=1MHz N-Ch 85 VDS=-10V , f=1MHz P-Ch 80 N-Ch 13 P-Ch 13 N-Ch 300 P-Ch 150 N-Ch 30 P-Ch 30 N-Ch 50 P-Ch 50 m pF pF pF ns ns ns ns IS=5A , VGS = 0 N-Ch 1.0 1.2 IS=-3A , VGS = 0 P-Ch -1.0 -1.2 (P-channel) V 120 VDS=-10V , f=1MHz tf A 84 460 See Specified Test Circuit A 50 N-Ch Switching Time Test Circuit (N-channel) N-Ch Unit V VDS=10V , f=1MHz td(off) VSD Max ID=-1mA , VGS=0 ID=5A , VGS=10V Output Capacitance Typ 30 RDS(on) 1 Ciss Min N-Ch RDS(on) 2 Input Capacitance Rise Time Testconditons ID=1mA , VGS=0 V