KEXIN RB160M-30

Diodes
SMD Type
Schottky Barrier Diode
RB160M-30
SOD-123
Features
Unit: mm
+0.1
2.7-0.1
+0.05
1.1-0.05
+0.1
0.55-0.1
+0.1
1.6-0.1
Small power mold type.
Low IR
High reliability
+0.1
3.7-0.1
0.50
1.10 0.05
0.35
0.03
3.8
0.1
+0.05
0.1-0.02
0.128
0.1max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Reverse voltage
VRM
30
V
reverse voltage
VR
30
V
Forward current surge peak
Io
1
A
IFSM
30
A
Tj
125
Tstg
-40 to +150
Average rectified forward current
operating junction temperature
storage temperature
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Symbol
Typ
Max
Unit
VF1
IF=0.5A
Testconditons
Min
0.39
0.46
V
VF2
IF=1.0A
0.43
0.48
V
IR1
VR=15V
3.0
20
A
IR2
VR=30V
9.0
50
A
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Diodes
SMD Type
RB160M-30
zElectrical characteristic curves (Ta=25°C)
1
10000
Ta=75℃
1000
Ta=125℃
Ta=25℃
0.1
Ta=-25℃
0.01
1000
Ta=75℃
100
1
Ta=-25℃
0.1
100
10
0.01
0
100
200
300
400
500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1
0
600
5
10
15
20
25
30
0
AVE:424.2mV
410
70
60
50
40
30
AVE:8.172uA
20
400
380
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
420
80
370
360
350
AVE:324.4pF
340
330
320
10
310
0
300
VF DISPERSION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
390
Ta=25℃
VR=30V
n=30pcs
90
REVERSE CURRENT:IR(uA)
430
Ct DISPERSION MAP
IR DISPERSION MAP
RESERVE RECOVERY TIME:trr(ns)
8.3ms
100
AVE:98.0A
50
100
20
1cyc
Ifsm
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
15
10
AVE:11.7ns
5
PEAK SURGE
FORWARD CURRENT:IFSM(A)
150
0
0
50
Ifsm
8.3ms 8.3ms
1cyc
0
1
1000
t
100
50
0
2
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
1
IF=0.5A
Rth(j-a)
100
1ms
time
300us
10
Rth(j-c)
1
D=1/2
0.8
DC
0.6
Sin(θ=180)
0.4
0.2
0
0.1
0.001
100
Mounted on epoxy board
IM=10mA
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
150
30
400
100
Ta=25℃
IF=1A
n=30pcs
440
5
10
15
20
25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
450
FORWARD VOLTAGE:VF(mV)
Ta=25℃
10
0.001
PEAK SURGE
FORWARD CURRENT:IFSM(A)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
f=1MHz
Ta=125℃
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
100
1000
0
0.5
1
1.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2