TM ECO-PAC 2 IGBT Module Preliminary Data Sheet OP 9 L9 E2 X15 AC 1 X13 GH 10 NTC NTC VX 18 X16 PSI 75/06* X16 L9 F1 IK 10 AC 1 PSIS 75/06* PSSI 75/06* IGBTs LMN S Symbol Conditions VCES TVJ = 25°C to 150°C IK 10 NTC L9 T16 X15 X15 K10 X16 IC25 = 69 A VCES = 600 V VCE(sat)typ. = 2.3 V PSIG 75/06 PSI 75/06* PSIS 75/06* PSSI 75/06* A IJK Maximum Ratings 600 V ± 20 V 69 48 A A 100 VCES A 10 µs 208 W • Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. • • • • VGES IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V *NTC optional Features 2.3 2.8 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.8 V V 6.5 V 0.8 4.4 mA mA 100 nA td(on) tr td(off) tf Eon Eoff Inductive load, TVJ = 125°C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22 Ω 50 55 300 30 1.8 1.4 ns ns ns ns mJ mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 2.8 nF RthJC RthJH (per IGBT) 1.2 0.6 K/W K/W with heatsink compound (0.42 K/m.K; 50 µm) PSIG 75/06* • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL registered, E 148688 Applications • • • • AC and DC motor control AC servo and robot drives power supplies welding inverters Advantages • • • • • Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 75/06 Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 40 A; TVJ = 25°C TVJ = 125°C IRM trr IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 15 70 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 2.6 1.3 K/W K/W 56 35 A A Package style and outline Dimensions in mm (1mm = 0.0394“) PSI Characteristic Values min. typ. max. 2.32 1.58 2.59 V V Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions PSSI Maximum Ratings TVJ Tstg -40...+150 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) a Max. allowable acceleration 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 PSIG g PSIS 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 75/06 150 IC 150 VGE= 17 V 15 V 13 V A 120 A 120 IC 90 VGE= 17 V 15 V 13 V 90 11V 60 60 TVJ = 25°C TVJ = 125°C 9V 30 0 11V 42T60 0 1 2 3 4 5 V 9V 30 0 6 42T60 0 1 2 3 4 VCE 5 V 6 VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 150 90 A 75 A 120 IF VCE = 20 V IC 60 90 45 TVJ = 125°C 60 TVJ = 125°C TVJ = 25°C 30 0 TVJ = 25°C 30 15 42T60 4 6 8 10 12 42T60 0 0,0 14 V 16 0,5 1,0 1,5 2,0 V VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 150 50 20 V 40 A 15 VGE VCE = 300 V IC = 50 A 10 120 ns trr IRM 90 30 TVJ = 125°C VR = 300 V IF = 30 A 20 5 60 30 10 IRM 0 42T60 0 40 80 120 QG Fig. 5 Typ. turn on gate charge nC 160 0 42T60 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 trr PSIG PSI PSIS PSSI 75/06 10,0 mJ Eon ns 7,5 75 tr 5,0 4 100 td(on) 400 mJ t 3 Eoff RG = 22 Ω TVJ = 125°C 0,0 Eon 42T60 0 40 A 80 t 50 2 25 1 0 0 120 RG = 22 Ω TVJ = 125°C mJ 0 40 80 IC 3 600 ns 60 t ns Eoff Eoff 2 VCE = 300 V VGE = ±15 V IC = 50 A TVJ = 125°C 42T60 0 10 20 30 40 40 1 20 0 50 Ω 60 VCE = 300 V VGE = ±15 V IC = 50 A TVJ = 125°C 200 tf 0 10 20 30 RG 42T60 0 50 Ω 60 40 RG Fig. 9 Typ. turn on energy and switching ICM 400 td(off) tr 1 0 120 mJ 3 2 42T60 A Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 80 Eon Eon 100 tf Fig. 7 Typ. turn on energy and switching td(on) 200 VCE = 300 V VGE = ±15 V IC 4 300 td(off) VCE = 300 V VGE = ±15 V 2,5 ns Eoff Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 120 10 A K/W 90 ZthJC RG = 22 Ω TVJ = 125°C diode 1 IGBT 0,1 60 0,01 30 0 single pulse 0,001 42T60 0 100 200 300 400 500 600 700 V 0,0001 0,00001 0,0001 0,001 VCE Fig. 11 Reverse biased safe operating area VID...75-06P1 0,01 0,1 1 s 10 t Fig. 12 Typ. transient thermal impedance RBSOA 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 t