SavantIC Semiconductor Product Specification 2N4907 2N4908 2N4909 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Excellent safe operating areas APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N4907 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N4908 Open emitter -60 2N4909 -80 2N4907 -40 2N4908 Emitter-base voltage UNIT -40 Open base 2N4909 VEBO VALUE -60 V V -80 Open collector -7 V IC Collector current -10 A IB Base current -4 A PD Total Power Dissipation 150 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification 2N4907 2N4908 2N4909 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N4907 VCEO(SUS) Collector-emitter sustaining voltage 2N4908 MIN TYP. MAX UNIT -40 IC=-0.2A ;IB=0 2N4909 V -60 -80 VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 V VBE(sat) Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V VBE(on) Base-emitter on voltage IC=-4A ; VCE=-4V -1.5 V ICEX Collector cut-off current VCE=-100V; VBE(off)=-1.5V TC=150 -1.0 -10.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -5.0 mA hFE-1 DC current gain IC=-4A ; VCE=-4V 20 hFE-2 DC current gain IC=-10A ; VCE=-4V 5 Transition frequency IC=-0.5A;VCE=-10V 4 fT 2 80 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N4907 2N4908 2N4909 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3