SAVANTIC 2SB1075

SavantIC Semiconductor
Product Specification
2SB1075
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·High collector-peak current
·Low collector saturation voltage
APPLICATIONS
·For audio frequency output
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-2
A
ICM
Collector current-Peak
-4
A
PD
Total power dissipation
1.2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
Ta=25
SavantIC Semiconductor
Product Specification
2SB1075
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-2mA ;IB=0
-40
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-50
V
VCEsat
Collector-emitter saturation voltage
IC=-3.0A; IB=-0.3A*
VBEsat
Base-emitter saturation voltage
IC=-2.0A ;IB=-0.2A*
ICBO
Collector cut-off current
ICEO
2
-1.0
V
2
-1.5
V
VCB=-50V; IE=0
-1
µA
Collector cut-off current
VCE=-10V; IE=0
-100
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
µA
hFE
DC current gain
IC=-1A ; VCE=-5V*
Transition frequency
IC=-0.5A ; VCE=-5V*
150
MHz
Collector output capacitance
IE=0; f=1MHz ; VCB=-20V
40
pF
fT
COB
2
50
2
2
Note: * pulse test
hFE Classifications
P
Q
R
50-100
80-160
120-220
2
220
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1075