SAVANTIC 2SC2939

SavantIC Semiconductor
Product Specification
2SC2939
Silicon NPN Power Transistors
DESCRIPTION
·With TO-247 package
·Switching power transistor
·High breakdown voltage
APPLICATIONS
·For switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
10
A
ICM
Collector current-Peak
20
A
PD
Total power dissipation
80
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2939
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=5A ;IB=1A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
At rated voltage
0.1
mA
0.1
mA
ICBO
CONDITIONS
MIN
MAX
400
UNIT
V
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
At rated voltage
hFE-1
DC current gain
IC=5A ; VCE=2V
10
hFE-2
DC current gain
IC=1mA ; VCE=2V
5
Transition frequency
IC=1A ; VCE=10V
fT
TYP.
2
50
20
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC2939