SavantIC Semiconductor Product Specification 2SC3117 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1249 ·High breakdown voltage ·Large current capacity APPLICATIONS ·Color TV sound output;converters; Inverters’ applications ·160V/1.5A switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 1.5 A ICM Collector current-peak 2.5 A PC Collector power dissipation Ta=25 1.0 TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3117 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=< 160 V V(BR)CBO Collector-base breakdown voltage IC=10µA; IE=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=10µA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 0.13 0.45 V VBEsat Base-emitter saturation voltage IC=500mA; IB=50mA 0.85 1.2 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 µA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 µA hFE-1 DC current gain IC=100mA ; VCE=5V 100 hFE-2 DC current gain IC=10mA ; VCE=5V 90 fT Transition frequency IC=50mA ; VCE=10V 120 MHz Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 22 pF hFE-1 Classifications R S T 100-200 140-280 200-400 2 MIN TYP. MAX UNIT 400 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC3117 SavantIC Semiconductor Product Specification 2SC3117 Silicon NPN Power Transistors 4