SAVANTIC 2SD1180

SavantIC Semiconductor
Product Specification
2SD1180
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Low collector saturation voltage
APPLICATIONS
·Designed for use in audio and radio
frequency power amplifiers
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
110
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
1.5
A
ICM
Collector current-peak
2.5
A
PC
Collector power dissipation
Ta=25
1.2
TC=25
20
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1180
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
110
V
V(BR)CBO
Collector-base breakdown voltage
IC=100µA; IE=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100µA ; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.2A
0.7
V
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
1.3
V
ICBO
Collector cut-off current
VCB=120V; IE=0
1.0
µA
IEBO
Emitter cut-off current
VEB=3V; IC=0
1.0
µA
hFE
DC current gain
IC=150mA ; VCE=5V
2
MIN
100
TYP.
MAX
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD1180