SAVANTIC 2SD401A

SavantIC Semiconductor
Product Specification
2SD401A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SB546A
·Collector current IC=2A
·Collector-collector voltage:VCEO=150V(Min)
APPLICATIONS
·For use in general purpose power amplifier,
vertical output application
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
2
A
ICM
Collector current-peak
3
A
PD
Total power dissipation
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
R9jc
CHARACTERISTICS
Thermal resistance junction to case
MAX
5.0
UNIT
/W
SavantIC Semiconductor
Product Specification
2SD401A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
150
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.5mA; IE=0
200
V
V(BR)EBO
Emitter-base breakdown votage
IE=0.5mA; IB=0
5
V
Collector-emitter saturation voltage
IC=500m A;IB=50m A
1.0
V
ICBO
Collector cut-off current
VCB=150V; IE=0
50
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
µA
hFE
DC current gain
IC=0.4A ; VCE=10V
Transition frequency
IC=0.4A ; VCE=10V;f=1MHz
VCEsat
fT
CONDITIONS
hFE classifications
M
L
K
40-80
60-120
100-200
2
MIN
TYP.
40
MAX
UNIT
200
5
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD401A