SavantIC Semiconductor Product Specification D45C Series Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type D44C Series ·Very low collector saturation voltage ·Fast switching APPLICATIONS ·Designed for various specific and general purpose application ·Shunt and switching regulators ·Low and high frequency inverters converters and etc. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS D45C1,2,3 VCBO VCEO Collector-base voltage Collector-emitter voltage VEBO Emitter-base voltage IC D45C4,5,6 VALUE -40 Open emitter -55 D45C7,8,9 -70 D45C10,11,12 -90 D45C1,2,3 -30 D45C4,5,6 UNIT Open base -45 D45C7,8,9 -60 D45C10,11,12 -80 Open collector V V -5 V Collector current (DC) -4 A ICM Collector current -peak -6 A IB Base current (DC) -1 A PD Total power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification D45C Series Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEsat VBEsat PARAMETER Collector-emitter saturation voltage D45C2,3,5,6,8,9,11,12 D45C1,4,7,10 CONDITIONS MIN TYP. MAX UNIT -0.5 V IC=-1A ;IB=-50mA IC=-1A ;IB=-0.1A Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.3 V ICES Collector cut-off current VCE=Rated VCES -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE-1 DC current gain D45C2,3,5,6,8,9,11,12 40 120 IC=-0.2A ; VCE=-1V D45C1,4,7,10 25 D45C1,4,7,10 10 IC=-1A ; VCE=-1V hFE-2 DC current gain D45C2,5,8,11 D45C3,6,9,12 fT Transition frequency 20 IC=-2A ; VCE=-1V IC=-20mA;VCE=-4V; f=1.0MHz 20 40 MHz Switching times tr Rise time ts Storage time tf Fall time IC=-1.0A; VCC=-20V IB1=-IB2=-0.1A 2 0.2 µs 0.6 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 D45C Series