SID6679
-75A, -30V,RDS(ON)9mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
Description
TO-251
The SID6679 provide the designer with the best combination of
fast switching, ruggerized device device design, low on-resistance
2.3±0.1
6.6±0.2
5.3±0.2
and cost -effectiveness.
0.5±0.05
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
7.0±0.2
5.6±0.2
1.2±0.3
0.75±0.15
Features
7.0±0.2
* Low On-Resistance
* Simple Drive Requirement
* Fast Switching Characteristic
0.6±0.1
0.5±0.1
2.3REF.
G
D
D
S
Dimensions in millimeters
G
S
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
-30
V
± 25
V
-75
A
-50
A
-300
A
89
W
0.71
W/ C
Tj, Tstg
-55~+150
o
Symbol
Ratings
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
o
Continuous Drain Current,VGS@10V
ID@TC=25 C
o
Continuous Drain Current,VGS@10V
Pulsed Drain Current
ID@TC=100 C
1
IDM
Total Power Dissipation
o
PD@TC=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
o
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Max.
Thermal Resistance Junction-ambient
Max.
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Rthj-c
Rthj-a
Unit
1.4
o
110
o
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SID6679
-75A, -30V,RDS(ON)9mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
BVDSS
- 30
BVDS/ Tj
_
VGS(th)
IGSS
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
2
Static Drain-Source On-Resistance
IDSS
RD S (O N )
Typ.
_
Max.
V
- 0.03
_
V/ C
-1.0
_
-3.0
V
_
_
±100
nA
VGS=±25V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-25
uA
VDS=-24V,VGS=0
_
_
o
9
_
_
15
Qg
_
42
67
Gate-Source Charge
Qgs
_
6
_
Gate-Drain ("Miller") Charge
Qgd
25
_
11
_
35
_
58
_
78
_
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
Test Condition
_
Total Gate Charge2
Turn-on Delay Time2
Unit
_
2870
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
34
Symbol
Min.
Typ.
960
740
mΩ
VGS=0V, ID=-250uA
o
Reference to 25 C, ID=- 1mA
VDS=VGS, ID=-250uA
VGS=-10V, ID=- 30A
VGS=-4.5V, ID=-24A
nC
ID=-16A
VDS=-24V
VGS=-4.5V
VDD=-15V
ID=-16A
nS
VGS=-10 V
RG=3.3Ω
RD=0.94Ω
4590
pF
VGS=0V
VDS=25V
_
S
VDS=-10V, ID=-24A
Max.
Unit
Test Condition
-1.2
V
IS=- 24A, VGS=0V.
nS
IS=-16A, VGS=0V.
_
f=1.0MHz
_
Source-Drain Diode
Parameter
Forward On Voltage 2
VSD
_
_
Reverse Recovery Time 2
Trr
_
47
_
Reverse Recovery Change
Qrr
43
_
_
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SID6679
Elektronische Bauelemente
-75A, -30V,RDS(ON)9mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 5. Forward Characteristics of
Reverse Diode
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SID6679
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-75A, -30V,RDS(ON)9mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4