SSM4426GM
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
30V
R DS(ON)
6.5mΩ
ID
16A
DESCRIPTION
The SSM4426GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM4426GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
Pb-free; RoHS-compliant SO-8
D
D
D
D
G
SO-8
S
S
S
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VDS
Drain-source voltage
30
V
VGS
Gate-source voltage
±20
V
ID
Continuous drain current, TC = 25°C
16
A
12.8
A
80
A
2.5
W
0.02
W/°C
TC = 70°C
1
IDM
Pulsed drain current
PD
Total power dissipation, TC = 25°C
Linear derating factor
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
RΘ JA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
Units
50
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
4/16/2006 Rev.3.01
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SSM4426GM
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=250uA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.02
-
V/°C
RDS(ON)
Static drain-source on-resistance2
VGS=10V, ID=16A
-
-
6.5
mΩ
VGS=4.5V, ID=12A
-
-
10
mΩ
0.8
-
2.5
V
VGS(th)
Gate threshold voltage
VDS=VGS, ID=250uA
gfs
Forward transconductance
VDS=10V, ID=16A
-
30
-
S
IDSS
Drain-source leakage current
VDS=30V, VGS=0V
-
-
1
uA
VDS=24V ,VGS=0V, Tj = 70°C
-
-
25
uA
VGS=±20V
-
-
±100
nA
ID=16A
-
28
45
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=25V
-
5
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=4.5V
-
16
-
nC
VDS=15V
-
12
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=1A
-
8
-
ns
td(off)
Turn-off delay time
RG=3.3Ω , VGS=10V
-
44
-
ns
tf
Fall time
RD=15Ω
-
17
-
ns
Ciss
Input capacitance
VGS=0V
-
2000
3200
pF
Coss
Output capacitance
VDS=25V
-
500
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
1370
-
pF
Rg
Gate resistance
f=1.0MHz
-
1.1
1.7
Ω
Min.
Typ.
IS=1.9A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
Test Conditions
Max. Units
VSD
Forward voltage
trr
Reverse-recovery time
IS=16A, VGS=0V,
-
30
-
ns
Qrr
Reverse-recovery charge
dI/dt=100A/µs
-
25
-
nC
2
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
4/16/2006 Rev.3.01
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SSM4426GM
100
100
10V
7.0V
5.0V
4.5V
T A = 25 C
ID , Drain Current (A)
80
60
80
V G =3.0V
40
V G =3.0V
60
40
20
20
0
0
0
2
4
0
6
2
Fig 1. Typical Output Characteristics
6
Fig 2. Typical Output Characteristics
20
1.9
I D = 16 A
V G =10V
I D = 12 A
T A =25°C
15
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
10
0.9
0.4
5
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
12
2.0
9
Normalized VGS(th) (V)
1.5
o
o
T j =150 C
T j =25 C
IS(A)
6
3
1.0
0.5
0.0
0
0
0.2
0.4
0.6
0.8
1
-50
1.2
Fig 5. Forward Characteristic of
Reverse Diode
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
4/16/2006 Rev.3.01
10V
7.0V
5.0V
4.5V
o
T A = 150 C
ID , Drain Current (A)
o
ff
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM4426GM
f=1.0MHz
16
10000
12
V DS = 15 V
V DS = 20 V
V DS = 25 V
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D = 16 A
8
1000
C oss
C rss
4
100
0
0
20
40
1
60
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Normalized Thermal Response (Rthja)
100us
1ms
ID (A)
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=125 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
VG
V DS =5V
ID , Drain Current (A)
80
T j =25 o C
T j =150 o C
QG
4.5V
60
QGS
QGD
40
20
Charge
Q
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4/16/2006 Rev.3.01
Fig 12. Gate Charge Waveform
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SSM4426GM
PHYSICAL DIMENSIONS
D
SYMBOL
MIN
MAX
A
1.35
1.75
A1
0.10
0.25
B
0.33
0.51
C
0.19
0.25
D
4.80
5.00
E
3.80
4.00
H
E
e
e
A
A1
C
B
L
1.27(TYP)
H
5.80
6.50
L
0.38
1.27
All dimensions in millimeters.
Dimensions do not include mold protrusions.
PART MARKING
PART NUMBER: 4426GM
XXXXXX
YWWSSS
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
PACKING: Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a 13 inch (330mm) reel packed in a moisture barrier bag (MBB).
4/16/2006 Rev.3.01
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