SSM20P02H,J
P-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Simple drive requirement
D
2.5V gate drive capability
Fast switching
BV DSS
-20V
R DS(ON)
52mΩ
ID
G
-18A
S
Description
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
The TO-252 package is widely preferred for all commercial and
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM20P02J) is available for low-profile applications.
G
D
TO-252(H)
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
- 20
V
VGS
Gate-Source Voltage
± 12
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
-18
A
ID@TA=100℃
Continuous Drain Current, VGS @ 10V
-14
A
-50
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
31.25
W
Linear Derating Factor
0.25
W/ ℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
4.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Rev.2.01 6/26/2003
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SSM20P02H,J
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
RDS(ON)
-20
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.03
-
V/℃
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-8A
-
-
52
mΩ
VGS=-2.5V, ID=-5A
-
-
85
mΩ
-0.5
-
-
V
VDS=-10V, ID=-8A
-
15
-
S
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 12
-
-
ID=-8A
-
13.5
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
Min. Typ. Max. Units
2
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
2.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
1.6
-
nC
VDS=-10V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-8A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-4.5V
-
45
-
ns
tf
Fall Time
RD=1.25Ω
-
27
-
ns
Ciss
Input Capacitance
VGS=0V
-
1050
-
pF
Coss
Output Capacitance
VDS=-16V
-
410
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=-1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
2
Forward On Voltage
1
Tj=25℃, IS=-10A, VGS=0V
Min. Typ. Max. Units
-
-
-10
A
-
-
-50
A
-
-
-1.2
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Rev.2.01 6/26/2003
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2 of 6
SSM20P02H,J
60
45
T C =25 C
-4.5V
T C =150 o C
-4.5V
o
-4.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
-4.0V
40
-3.5V
-3.0V
20
-2.5V
-3.5V
30
-3.0V
-2.5V
15
VGS= -2.0V
VGS= -2.0V
0
0
0
2
4
0
6
2.5
5
7.5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
2
I D = -8A
V GS = -4.5V
I D = -8A
T c =25 ℃
120
Normalized R DS(ON)
RDS(ON) (mΩ )
1.4
80
0.8
40
0
0.2
0
3
6
9
12
-50
0
Fig 3. On-Resistance v.s. Gate Voltage
Rev.2.01 6/26/2003
50
100
150
T j , Junction Temperature ( o C)
-V GS (V)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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SSM20P02H,J
20
40
16
12
PD (W)
-ID , Drain Current (A)
30
20
8
10
4
0
0
25
50
75
100
125
0
150
30
T c , Case Temperature ( o C)
60
90
120
150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (R thjc)
Duty Factor = 0.5
-ID (A)
100us
10
1ms
10ms
T C =25 °C
Single Pulse
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak T j = PDM x Rthjc + TC
100ms
DC
0.01
1
0.1
1
10
100
0.00001
-V DS (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Rev.2.01 6/26/2003
0.0001
Fig 8. Effective Transient Thermal Impedance
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4 of 6
SSM20P02H,J
8
10000
f=1.0MHz
6
Ciss
1000
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -8A
V DS = -16V
4
Coss
Crss
100
2
0
10
0
5
10
15
20
1
7
13
19
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
1.2
0.9
-IS(A)
T j =150 o C
-VGS(th) (V)
10
T j =25 o C
0.6
1
0.3
0
0
0.2
0.5
0.8
1.1
1.4
-50
-V SD (V)
Rev.2.01 6/26/2003
50
100
150
o
T j , Junction Temperature ( C)
Fig 11. Forward Characteristic of
Reverse Diode
0
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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SSM20P02H,J
VDS
90%
RD
VDS
D
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
RG
G
10%
S
VGS
VGS
-4.5 V
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
TO THE
OSCILLOSCOPE
D
0.8 x RATED VDS
G
S
QG
-4.5V
QGS
QGD
VGS
-1~-3mA
I
G
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.01 6/26/2003
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