SSM9435K
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
D
Low on-resistance
S
Fast switching
SOT-223
G
BV DSS
-30V
R DS(ON)
50mΩ
-6A
ID
D
Description
D
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID @ TA=25°C
ID @ TA=70°C
Rating
Units
-30
V
± 25
V
3
-6
A
3
-4.8
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-20
A
PD @ TA=25°C
Total Power Dissipation
2.7
W
Linear Derating Factor
0.02
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Rthj-amb
Rev.1.01 5/25/2004
Parameter
Thermal Resistance Junction-ambient
3
Max.
www.SiliconStandard.com
Value
Unit
45
°C/W
1 of 4
SSM9435K
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
RDS(ON)
-30
-
-
V
-
-0.02
-
V/°C
VGS=-10V, ID=-5.3A
-
-
50
mΩ
VGS=-4.5V, ID=-4.2A
-
-
100
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-5.3A
-
10
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 25V
-
-
±100
nA
ID=-5.3A
-
9.2
16
nC
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=-250uA
Min. Typ. Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
2.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5.2
-
nC
VDS=-15V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=6Ω ,VGS=-10V
-
25
-
ns
tf
Fall Time
RD=15Ω
-
17
-
ns
Ciss
Input Capacitance
VGS=0V
-
507
912
pF
Coss
Output Capacitance
VDS=-15V
-
222
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
158
-
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Min. Typ. Max. Units
VSD
Forward On Voltage
IS=-2.3A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-5.3A, VGS=0V,
-
29
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 120 °C/W when mounted on Min. copper pad.
Rev.1.01 5/25/2004
www.SiliconStandard.com
2 of 4
SSM9435K
30
30
-10V
-8.0V
T A =25 o C
-6.0V
-5.0V
V G =-4.0V
20
15
10
-10V
-8.0V
-6.0V
-5.0V
V G =-4.0V
T A =150 o C
25
-ID , Drain Current (A)
-ID , Drain Current (A)
25
20
15
10
5
5
0
0
0
1
2
3
4
0
5
1
2
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
110
1.8
I D =5.3A
T A =25°C
100
I D =-5.3A
V G =10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
90
80
70
60
1.4
1.2
1.0
50
0.8
40
30
0.6
3
4
5
6
7
8
9
10
11
-50
0
Fig 3. On-Resistance vs. Gate Voltage
4
10.00
3
VGS(th) (V)
-IS(A)
100
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
100.00
T j =25 o C
T j =150 o C
50
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
1.00
2
1
0.10
0
0.01
-50
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Rev.1.01 5/25/2004
0
50
100
150
1.5
T j , Junction Temperature (
o
C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
www.SiliconStandard.com
3 of 4
SSM9435K
1
-ID (A)
10
Normalized Thermal Response (Rthja)
100
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
0.01
0.1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 120°C/W
DC
0.001
1
10
0.0001
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
1
10
100
1000
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
14
Fig 8. Effective Transient Thermal Impedance
f=1.0MHz
10000
I D = -5.3A
V DS = -24V
12
10
1000
8
Ciss
C (pF)
-VGS , Gate to Source Voltage (V)
0.1
6
Coss
Crss
100
4
2
0
10
0
2
4
6
8
10
12
14
16
18
1
5
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 10. Typical Capacitance Characteristics
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.1.01 5/25/2004
www.SiliconStandard.com
4 of 4