SSM9987GM
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
D2
Low Gate Charge
Single Drive Requirement
Surface Mount Package
D1
D2
D1
G2
SO-8
S1
80V
RDS(ON)
90mΩ
ID
S2
DESCRIPTION
BVDSS
3.5A
G1
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast
switching, ruggedized device design, lower on-resistance
and cost-effectiveness.
D2
D1
G2
G1
S1
Pb-free; RoHS-compliant
S2
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
80
V
±25
V
3
3.5
A
3
2.8
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
30
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL DATA
Symbol
Rthj-a
05/31/2007 Rev.1.00
Parameter
Thermal Resistance Junction-ambient
3
Max.
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Value
Unit
62.5
℃/W
1
SSM9987GM
ELECTRICAL CHARACTERISTICS @Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
80
-
-
V
-
0.08
-
V/℃
VGS=10V, ID=3A
-
-
90
mΩ
VGS=4.5V, ID=1A
-
-
105
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=3A
-
7
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=80V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=64V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=3A
-
11
18
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS(th)
IGSS
Static Drain-Source On-Resistance
2
VGS=0V, ID=1mA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=64V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
VDS=40V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
24
-
ns
tf
Fall Time
RD=40Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
980
1570
pF
Coss
Output Capacitance
VDS=25V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Min.
Typ.
IS=1.6A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
Max. Units
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
40
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
05/31/2007 Rev.1.00
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2
SSM9987GM
30
30
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
25
T A =150 C
25
20
15
V G =3.0V
10
5
20
15
10
V G =3.0V
5
0
0
0
3
6
9
12
0
3
V DS , Drain-to-Source Voltage (V)
9
12
Fig 2. Typical Output Characteristics
180
2.3
ID=3A
V G =10V
I D =1A
150
1.8
o
T A =25 C
Normalized RDS(ON)
RDS(ON) (mΩ)
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
120
90
1.3
0.8
60
0.3
2
4
6
8
-50
10
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
3
1.2
Normalized VGS(th) (V)
4
o
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
o
T j =150 C
0
o
V GS , Gate-to-Source Voltage (V)
IS(A)
10V
7.0V
5.0V
4.5V
o
ID , Drain Current (A)
T A =25 o C
T j =25 C
2
0.9
0.6
1
0.3
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
05/31/2007 Rev.1.00
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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3
SSM9987GM
f=1.0MHz
15
10000
V DS =64V
V DS =50V
V DS =40V
12
C iss
1000
9
C (pF)
VGS , Gate to Source Voltage (V)
I D =3A
6
100
C oss
C rss
3
0
10
0
10
20
1
30
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R thja)
Duty factor=0.5
10
ID (A)
100us
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
0.01
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse
Rthja = 135℃/W
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
QG
20
T j =25 o C
4.5V
T j =150 o C
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
05/31/2007 Rev.1.00
Fig 12. Gate Charge Waveform
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SSM9987GM
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
05/31/2007 Rev.1.00
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5