SSM2603GY
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
S
Simple Drive Requirement
Small Package Outline
Surface Mount Device
D
D
G
D
SOT-26
BVDSS
-20V
RDS(ON)
65mΩ
ID
-5.0A
D
DESCRIPTION
D
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
The SOT-26 package is universally used for all commercial–industrial
applications.
S
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-20
V
±12
V
3
-5
A
3
-4
A
-20
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL DATA
Symbol
Rthj-a
11/29/2007 Rev.1.00
Parameter
Thermal Resistance Junction-ambient
3
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Max.
Value
Unit
62.5
℃/W
1
SSM2603GY
ELECTRICAL CHARACTERISTICS
o
(TJ=25 C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-20
-
-
V
-
-0.1
-
V/℃
VGS=-10V, ID=-4.5A
-
-
53
mΩ
VGS=-4.5V, ID=-4.2A
-
-
65
mΩ
VGS=-2.5V, ID=-2.0A
-
-
120
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5
-
-1.2
V
gfs
Forward Transconductance
VDS=-5V, ID=-2.8A
-
9
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=55 C)
VDS=-16V, VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS= ±12V
-
-
±100
nA
ID=-4.2A
-
10.6
16
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
o
IGSS
2
VGS=0V, ID=-250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
2.32
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3.68
-
nC
VDS=-15V
-
5.9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-4.2A
-
3.6
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
32.4
-
ns
tf
Fall Time
RD=3.6Ω
-
2.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
1200
pF
Coss
Output Capacitance
VDS=-15V
-
167
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
126
-
pF
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
IS=-4.2A, VGS=0V,
-
27.7
-
ns
dI/dt=100A/µs
-
22
-
nC
SOURCE-DRAIN DIODE
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
11/29/2007 Rev.1.00
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2
SSM2603GY
40
36
o
T A =25 C
-5.0V
-5.0V
TA=150oC
32
-4.0V
28
-ID , Drain Current (A)
-ID , Drain Current (A)
30
-4.0V
20
-3.0V
10
V G = -2.0V
24
65mΩ
20
-3.0V
16
12
8
V G = -2.0V
4
0
0
0
1
2
3
4
5
6
7
8
0
9
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
7
Fig 2. Typical Output Characteristics
220
1.8
I =-4.2A
I DD=-4.2A
T A =25o o C
T A =25 C
I D = -4.2A
V GS = -4.5V
1.6
Normalized RDS(ON)
180
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
140
100
1.4
1.2
1
60
0.8
20
0.6
0
2
4
6
8
10
12
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
10
1
T j =150 o C
-VGS(th) (V)
-IS(A)
1
T j =25 o C
0.5
0.1
2.01E+08
0
0.01
0
0.4
0.8
1.2
1.6
-50
0
Fig 5. Forward Characteristic of
Reverse Diode
11/29/2007 Rev.1.00
50
T j , Junction Temperature (
-V SD , Source-to-Drain Voltage (V)
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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3
SSM2603GY
12
f=1.0MHz
1000
C iss
-VGS , Gate to Source Voltage (V)
I D = -4.2A
10
V DS = -16V
65mΩ
C (pF)
8
6
C oss
C rss
100
4
2
0
10
0
5
10
15
20
25
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.2
0.1
0.1
0.05
PDM
0.01
t
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 156℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
VDS
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Charge
Fig 11. Switching Time Waveform
11/29/2007 Rev.1.00
Q
Fig 12. Gate Charge Waveform
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SSM2603GY
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
11/29/2007 Rev.1.00
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