WTC4501 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 3.2 AMPERES P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 SOURCE Features: * Leading Planar Technology for Low Gate Charge / Fast Switching. * 2.5V Rated for Low Voltage Gate Drive. * SOT−23 Surface Mount for Small Footprint. 3 1 2 Applications: SOT-23 * Load/Power Switch for Portables. * Load/Power Switch for Computing. * DC−DC Conversion. Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage VG S ±12 V Continuous Drain Current TA=25°C TA=85°C ID 3.2 2.4 A Pulsed Drain Current tp=10μS IDM 10 A Continuous Source Current (Body Diode) IS 1.6 A Total Power Dissipation (TA =25°C ) PD 1.25 W Maximum Junction-Ambient 1,2 R θJA 100 300 °C/W Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260° °C Operating Junction Temperature Range TJ -55~+150 °C Tstg -55~+150 °C Storage Temperature Range 1. Surface−mounted on FR4 board using 1 in sq pad size(Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. Device Marking WTC4501 = N45 WEITRON http://www.weitron.com.tw 1/4 06-Nov-09 WTC4501 Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units V(BR)DSS VGS = 0 V, ID = 250 A 20 24.5 V 22 mV/°C OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS/TJ IDSS VGS = 0 V TJ = 25°C 1.5 A VDS = 16 V TJ = 85°C 10 A ±100 nA 1.2 V IGSS VDS = 0 V, VGS = ±12 V Gate Threshold Voltage (Note 3) VGS(TH) VGS = VDS, ID = 250 A Negative Threshold Temperature Coefficient VGS(TH)/TJ Gate−to−Source Leakage Current ON CHARACTERISTICS Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.65 −2.3 mV/°C VGS = 4.5 V, ID = 3.6 A 70 80 VGS = 2.5 V, ID = 3.1 A 85 105 VDS = 5.0 V, ID = 3.6 A 9 m S CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Ciss Coss 200 VGS = 0 V, f = 1.0 MHz, VDS = 10 V 80 Crss 50 QG(TOT) 2.4 VGS = 4.5 V, VDS = 10 V, ID = 3.6 A Gate−to−Source Gate Charge QGS Gate−to−Drain Charge QGD 0.6 td(on) 6.5 pF 6.0 0.5 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDS = 10 V, ID = 3.6 A, RG = 6.0 tf 12 ns 12 3 SOURCE−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Discharge Time Reverse Recovery Charge ta tb VGS = 0 V, ISD = 1.6 A 0.8 1.2 V 7.1 VGS = 0 V, A/s dIS/dt = 100 A/s, IS = 1.6 A QRR 5 ns 1.9 3.0 nC 3. Pulse Test: Pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. WEITRON http:www.weitron.com.tw 2/4 06-Nov-09 WTC4501 TYPICAL ELECTRICAL CHARACTERISTICS WEITRON http://www.weitron.com.tw 3/4 06-Nov-09 WTC4501 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 4/4 06-Nov-09