ADPOW APTGT400U170D4G

APTGT400U170D4G
Single switch
Trench + Field Stop IGBT®
Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
1
3
5
2
2
1
4
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
• High level of integration
• Kelvin emitter for easy drive
• Low stray inductance
- M6 connectors for power
- M4 connectors for signal
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operation Area
TC = 25°C
Max ratings
1700
800
400
800
±20
2080
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
March, 2006
3
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT400U170D4G – Rev 1
5
VCES = 1700V
IC = 400A @ Tc = 80°C
APTGT400U170D4G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn On Energy
Eoff
Turn Off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
VGE = 0V, VCE = 1700V
Tj = 25°C
VGE = 15V
IC = 400A
Tj = 125°C
VGE = VCE , IC = 16 mA
VGE = 20V, VCE = 0V
Diode Forward Voltage
Er
Reverse Recovery Energy
trr
Reverse Recovery Time
Min
Test Conditions
Min
1700
VR=1700V
IF = 400A
VGE = 0V
IF = 400A
VR = 900V
di/dt =4200A/µs
Qrr
Reverse Recovery Charge
5.2
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 400A
R G = 3.6Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 400A
R G = 3.6Ω
VGE = ±15V
Tj = 125°C
VBus = 900V
IC = 400A
Tj = 125°C
R G = 3.6Ω
DC forward current
VF
Min
Tj = 25°C
Tj = 125°C
Tc=80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
APT website – http://www.advancedpower.com
Typ
2.0
2.4
5.8
Typ
33
1.2
250
100
850
Max
Unit
1
2.4
mA
6.4
400
V
nA
Max
Unit
V
nF
ns
120
300
100
1000
ns
200
150
mJ
125
Typ
Max
750
1000
400
1.8
1.9
50
100
420
525
100
170
Unit
V
µA
A
2.2
V
mJ
ns
µC
March, 2006
Test Conditions
2-5
APTGT400U170D4G – Rev 1
Symbol Characteristic
APTGT400U170D4G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
M6
M4
3500
-40
-40
-40
3
1
Typ
Max
0.06
0.09
Unit
°C/W
V
150
125
125
5
2
420
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGT400U170D4G – Rev 1
March, 2006
D4 Package outline (dimensions in mm)
APTGT400U170D4G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
800
800
700
500
IC (A)
IC (A)
VGE=20V
600
600
TJ =125°C
400
500
VGE =13V
400
300
300
200
200
100
100
0
VGE =15V
V GE=9V
0
0
0.5
1
1.5
2 2.5
V CE (V)
3
3.5
4
0
1
2
3
VCE (V)
4
5
Energy losses vs Collector Current
Transfert Characteristics
800
500
VCE = 900V
VGE = 15V
RG = 3.6Ω
T J = 125°C
T J=25°C
700
400
600
E (mJ)
500
IC (A)
T J = 125°C
700
T J=25°C
T J=125°C
400
300
TJ=125°C
200
300
Eon
Eoff
200
100
Er
100
0
0
5
6
7
8
9
10
0
11
100 200 300 400 500 600 700 800
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
500
1000
VCE = 900V
VGE =15V
IC = 400A
TJ = 125°C
200
Eoff
400
VGE =15V
TJ =125°C
RG=3.6Ω
200
100
Er
0
0
5
10
15
20
Gate Resistance (ohms)
0.05
400
800
1200
1600
2000
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.07
0.06
0
25
IGBT
0.9
March, 2006
0
Thermal Impedance (°C/W)
600
0.7
0.04
0.03
0.02
0.01
0
0.00001
0.5
0.3
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGT400U170D4G – Rev 1
300
800
Eon
IC (A)
E (mJ)
400
APTGT400U170D4G
Forward Characteristic of diode
800
20
ZVS
15
VCE=900V
D=50%
RG =3.6 Ω
TJ=125°C
TC=75°C
700
500
ZCS
10
T J=25°C
600
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
25
400
T J=125°C
300
TJ =125°C
200
5
hard
switching
100
0
0
0
100
200
300
IC (A)
400
500
600
0
0.5
1
1.5
V F (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.1
0.08
0.9
Diode
0.7
0.06
0.5
0.04
0.02
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT400U170D4G – Rev 1
March, 2006
rectangular Pulse Duration (Seconds)