ADPOW APTGF200U60D4

APTGF200U60D4
Single switch
NPT IGBT Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
1
3
5
2
2
1
Features
• Non Punch Through (NPT) fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
- M6 connectors for power
- M4 connectors for signal
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operation Area
TC = 25°C
Max ratings
600
250
200
400
±20
735
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
June, 2005
3
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGF200U60D4 – Rev 1
4
5
VCES = 600V
IC = 200A @ Tc = 80°C
APTGF200U60D4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VF
Diode Forward Voltage
ER
Reverse Recovery Energy
Qrr
Reverse Recovery Charge
Tj = 25°C
Tj = 125°C
Tj = 25°C
VGE = 15V
IC = 200A
Tj = 125°C
VGE = VCE , IC = 4mA
VGE = 20V, VCE = 0V
Min
Typ
Max
Unit
500
µA
mA
4.5
1
1
1.95
2.2
5.5
VGE = 0V
VCE = 600V
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
R G = 1.5Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 200A
R G = 1.5Ω
Test Conditions
VR=600V
Typ
9
0.8
163
43
6.5
400
V
nA
Max
Unit
nF
ns
253
33
183
49
285
41
4.6
6.3
Min
600
Typ
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
1.25
1.2
4.1
Tj = 25°C
12
Tj = 125°C
19
V
ns
mJ
Max
250
500
1.6
Unit
V
µA
V
mJ
µC
June, 2005
IF = 200A
VGE = 0V
IF = 200A
VR = 300V
di/dt
=4000A/µs
Min
2.45
APT website – http://www.advancedpower.com
2-5
APTGF200U60D4 – Rev 1
ICES
Test Conditions
APTGF200U60D4
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
M6
M4
2500
-40
-40
-40
3
1
Typ
Max
0.17
0.29
Unit
°C/W
V
150
125
125
5
2
420
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGF200U60D4 – Rev 1
June, 2005
Package outline (dimensions in mm)
APTGF200U60D4
Typical Performance Curve
Output Characteristics (V GE=15V)
Output Characteristics
400
400
350
300
300
250
T J=125°C
IC (A)
IC (A)
TJ = 125°C
350
TJ =25°C
200
V GE=20V
200
150
150
100
100
50
50
V GE=9V
0
0
0.5
1
1.5
2
VCE (V)
2.5
3
3.5
0
VCE = 300V
VGE = 15V
RG = 1.5Ω
TJ = 125°C
12.5
300
10
E (mJ)
250
200
150
TJ =125°C
3
V CE (V)
4
5
Eon
Eoff
7.5
Er
5
100
2.5
TJ=25°C
50
2
15
T J=25°C
350
1
Energy losses vs Collector Current
Transfert Characteristics
400
0
0
5
6
7
8
9
10
11
0
12
50 100 150 200 250 300 350 400
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
16
Reverse Safe Operating Area
500
VCE = 300V
VGE =15V
IC = 200A
T J = 125°C
Eon
8
400
IC (A)
12
E (mJ)
VGE =12V
250
0
IC (A)
VGE=15V
Eoff
300
200
4
VGE =15V
TJ =125°C
RG=1.5Ω
100
Er
0
0
0
2
4
6
8
10
Gate Resistance (ohms)
12
0
100
200
300
400
500
600
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.14
0.12
0.1
0.08
0.06
0.9
IGBT
0.7
June, 2005
0.16
0.5
0.3
0.04
0.1
0.02
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
1
10
4-5
APTGF200U60D4 – Rev 1
Thermal Impedance (°C/W)
0.18
APTGF200U60D4
VCE =300V
D=50%
RG=1.5Ω
T J=125°C
T C=75°C
ZCS
80
ZVS
60
350
300
250
40
200
TJ=125°C
150
hard
switching
20
100
TJ =25°C
50
0
0
0
50
100
150
IC (A)
200
250
300
0
0.2 0.4 0.6 0.8 1
V F (V)
1.2 1.4 1.6
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.3
0.9
Diode
0.25
0.7
0.2
0.1
0.05
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
June, 2005
0.15
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGF200U60D4 – Rev 1
Thermal Impedance (°C/W)
Forward Characteristic of diode
400
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
100