ANPEC APM4548K

APM4548K
Dual Enhancement Mode MOSFET (N-and P-Channel)
Pin Description
Features
•
N-Channel
30V/7A,
RDS(ON) = 18mΩ (typ.) @ VGS = 10V
RDS(ON) = 23mΩ (typ.) @ VGS = 4.5V
•
P-Channel
Top View of SOP − 8
-30V/-6A,
RDS(ON) = 32mΩ (typ.) @ VGS =-10V
RDS(ON) = 42mΩ (typ.) @ VGS =-4.5V
•
•
•
(8)
D1
Super High Dense Cell Design
Reliable and Rugged
(4)
G2
Lead Free Available (RoHS Compliant)
(2)
G1
Applications
•
(3)
S2
(7)
D1
Power Management in Notebook Computer,
S1
(1)
Portable Equipment and Battery Powered
D2
(5)
D2
(6)
N-Channel MOSFET P-Channel MOSFET
Systems
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 ° C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4548
Lead Free Code
Handling Code
Temp. Range
Package Code
APM4548 K :
APM4548
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
1
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APM4548K
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
N Channel
P Channel
VDSS
Drain-Source Voltage
30
-30
VGSS
Gate-Source Voltage
±20
±20
7
-6
30
-20
1.2
-1
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
I S*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Power Dissipation
RθJA*
VGS=10V (N)
VGS=-10V (P)
Unit
V
A
A
150
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
W
°C/W
62.5
Note:
2
*Surface Mounted on 1in pad area, t ≤ 10sec.
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM4548K
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V, IDS=250µA
N-Ch
30
VGS=0V, IDS=-250µA
P-Ch
-30
VDS=24V, VGS=0V
IDSS
Zero Gate Voltage Drain
Current
TJ=85°C
VDS=-24V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
IGSS
RDS(ON) a
Gate Leakage Current
Drain-Source On-State
Resistance
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
V
1
N-Ch
30
-1
P-Ch
-30
VDS=VGS, IDS=250µA
N-Ch
1
1.5
2
VDS=VGS, IDS=-250µA
P-Ch
-1
-1.5
-2
VGS=±20V, VDS=0V
N-Ch
±100
P-Ch
±100
VGS=10V, IDS=7A
N-Ch
18
24
VGS=-10V, IDS=-6A
P-Ch
32
42
VGS=4.5V, IDS=5A
N-Ch
23
30
VGS=-4.5V, IDS=-5A
P-Ch
42
55
2
µA
V
nA
mΩ
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APM4548K
Electrical Characteristics (Cont.)
Symbol
Parameter
(T A = 25°C unless otherwise noted)
APM4548K
Test Condition
Min.
Typ.
Max.
Unit
Diode Characteristics
VSD a
Diode Forward Voltage
ISD =2A, V GS=0V
N-Ch
0.8
1.3
ISD =-2.3A, V GS=0V
P-Ch
-0.8
-1.3
N-Ch
2.5
P-Ch
11
N-Ch
960
P-Ch
980
N-Ch
180
P-Ch
155
N-Ch
100
P-Ch
120
N-Ch
7
14
P-Ch
7
14
N-Ch
9
17
P-Ch
10
20
N-Ch
34
62
P-Ch
38
70
N-Ch
12
23
P-Ch
14
26
N-Ch
5
P-Ch
3
N-Ch
19
25
P-Ch
24
30
N-Ch
2
P-Ch
2
N-Ch
3.6
P-Ch
3.7
V
Dynamic Characteristics b
RG
Gate Resistance
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer
Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
V GS=0V,V DS=0V,F=1MHz
N-Channel
V GS=0V,
V DS=15V,
Frequency=1.0MHz
P-Channel
V GS=0V,
V DS=-15V,
Frequency=1.0MHz
N-Channel
V DD=15V, R L=15Ω,
IDS =1A, V GEN =10V,
R G =6Ω
P-Channel
V DD=-15V, R L=15Ω,
IDS =-1A, V GEN =-10V,
R G =6Ω
Tf
Turn-off Fall Time
Q rr
N-Channel
ISD =7A, dISD /dt =100A/µs
Reverse Recovery Charge
P-Channel
ISD =-6A, dISD /dt =100A/µs
Ω
pF
ns
nC
Gate Charge Characteristics b
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
N-Channel
V DS=15V, VGS=10V,
IDS =7A
P-Channel
V DS=-15V, VGS=-10V,
IDS =-6A
nC
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
3
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APM4548K
Typical Characteristics
N-Channel
Drain Current
Power Dissipation
8
2.5
7
ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
6
5
4
3
2
0.5
1
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
100
10
TA=25 C,VG=10V
1ms
10ms
1
100ms
1s
0.1
DC
O
T =25 C
0.01 A
0.01
0.1
1
10
Rev. B.1 - Sep., 2005
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4548K
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
Drain-Source On Resistance
30
40
VGS= 4, 5, 6, 7, 8, 9, 10V
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
25
20
15
3V
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
25
20
VGS=10V
15
10
5
3.0
0
5
10
15
20
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.6
Normalized Threshold Voltage
20
15
o
Tj=125 C
10
o
Tj=-55 C
o
Tj=25 C
5
0
25
VDS - Drain-Source Voltage (V)
25
ID - Drain Current (A)
VGS=4.5V
30
2V
30
0
35
1
2
3
4
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
IDS =250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
5
30
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
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APM4548K
Typical Characteristics (Cont.)
N-Channel
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
30
1.6
IDS = 7A
10
o
1.4
IS - Source Current (A)
Normalized On Resistance
VGS = 10V
1.2
1.0
0.8
Tj=150 C
o
Tj=25 C
1
0.6
o
[email protected]=25 C: 18mΩ
0.4
-50 -25
0
25
50
0.1
0.0
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1.4
10
1500
Frequency=1MHz
VDS= 15V
VGS - Gate - source Voltage (V)
ID= 7A
C - Capacitance (pF)
1200
Ciss
900
600
300
0
Coss
Crss
8
6
4
2
0
0
5
10
15
20
25
Rev. B.1 - Sep., 2005
4
8
12
16
20
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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0
6
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APM4548K
Typical Characteristics (Cont.)
P-Channel
Power Dissipation
Drain Current
7
2.5
6
5
-ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
4
3
2
0.5
1
o
o
0.0
TA=25 C
0
20
40
0
60
80 100 120 140 160
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
-ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
100
10
TA=25 C,VG=-10V
300us
1ms
1
10ms
100ms
1s
0.1
DC
O
T =25 C
0.01 A
0.01
0.1
1
10
Rev. B.1 - Sep., 2005
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
2
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
7
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APM4548K
Typical Characteristics (Cont.)
P-Channel
Output Characteristics
Drain-Source On Resistance
20
80
18
VGS= -4,-5,-6,-7,-8,-9,-10V
RDS(ON) - On - Resistance (mΩ)
70
-ID - Drain Current (A)
16
14
12
10
8
-3V
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
40
VGS= -10V
30
20
10
0
4
8
12
16
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.6
18
20
IDS = -250µA
Normalized Threshold Voltage
1.4
16
-ID - Drain Current (A)
VGS= -4.5V
50
0
3.0
20
14
12
10
8
o
Tj=125 C
6
o
Tj=-55 C
4
o
Tj=25 C
2
0
60
0
1
2
3
4
Rev. B.1 - Sep., 2005
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
5
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
1.2
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
8
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APM4548K
Typical Characteristics (Cont.)
P-Channel
Source-Drain Diode Forward
Drain-Source On Resistance
20
1.8
VGS = -10V
IDS = -6A
10
o
Tj=150 C
1.4
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
0.6
0.4
o
Tj=25 C
1
0.2
o
[email protected]=25 C: 32mΩ
0.0
-50 -25
0
25
50
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1400
10
Frequency=1MHz
VDS= -15V
-VGS - Gate - source Voltage (V)
C - Capacitance (pF)
1200
Ciss
1000
800
600
400
Coss
200
ID= -6A
8
6
4
2
Crss
0
0
0
4
8
12
16
20
Rev. B.1 - Sep., 2005
5
10
15
20
25
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
0
9
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APM4548K
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Millimeters
Inches
Min.
Max.
Min.
Max.
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
e2
1.27BSC
0.50BSC
φ1
8°
8°
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
10
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APM4548K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (T L)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
11
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APM4548K
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s
3
3
Package Thickness
Volume mm
Volume mm
<350
≥350
<2.5 mm
240 +0/-5°C
225 +0/-5°C
≥2.5 mm
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
D1
12
Ko
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APM4548K
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
A
330±1
SOP-8
F
5.5 ± 0.1
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
D
D1
Po
1.55±0.1 1.55+ 0.25 4.0 ± 0.1
T1
12.4 +0.2
T2
2± 0.2
W
12 + 0.3
- 0.1
P1
2.0 ± 0.1
Ao
6.4 ± 0.1
Bo
5.2± 0.1
Carrier Width
12
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
SOP- 8
P
8± 0.1
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
13
www.anpec.com.tw