AO6601 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS (V) = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60mΩ (VGS = 10V) < 135mΩ (VGS = -10V) < 75mΩ (VGS = 4.5V) < 185mΩ (VGS = -4.5V) < 115mΩ(VGS = 2.5V) < 265mΩ (VGS = -2.5V) The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6601L is a Green Product ordering option. AO6601 and AO6601L are electrically identical. D2 D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 G1 D1 S1 D2 G2 S1 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±12 ±12 3.4 -2.3 ID 2.7 -1.8 IDM 30 -30 1.15 1.15 0.73 0.73 -55 to 150 -55 to 150 TA=25°C Continuous Drain Current A TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Max p-channel -30 Symbol RθJA RθJL Typ 78 106 64 Max 110 150 80 Units V V A W °C Units °C/W °C/W °C/W AO6601 n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, V DS=5V 10 TJ=55°C VGS=10V, I D=3A TJ=125°C Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 1 1.4 V 50 60 A 75 88 115 mΩ VDS=5V, ID=3A 7.8 S 0.8 1 V 1.5 A 390 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, V DS=15V, I D=3A VGS=10V, VDS=15V, RL=5Ω, RGEN=6Ω pF 54.5 pF 41 pF 3 Ω 4.34 nC 1.38 nC 0.6 nC 4 ns 2 ns 22 ns 3 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3A, dI/dt=100A/µs 11 Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs 5.5 Qrr mΩ VGS=2.5V, I D=2A DYNAMIC PARAMETERS Ciss Input Capacitance Rg nA mΩ Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 100 75 VSD Output Capacitance µA 60 Forward Transconductance Coss 5 VGS=4.5V, I D=3A gFS Crss V 1 IGSS IS Units 30 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max VDS=24V, VGS=0V IDSS RDS(ON) Typ A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6601 n-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3V 12 8 VDS=5V 4.5V 25°C 125°C 6 ID(A) ID (A) 9 2.5V 4 6 3 2 VGS=2V 0 0 0 1 2 3 4 5 0 0.5 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 150 1.8 Normalized On-Resistance 125 VGS=2.5V RDS(ON) (mΩ) 1 100 VGS=4.5V 75 50 VGS=10V 25 1.6 VGS=4.5V VGS=10V 1.4 1.2 VGS=2.5V 1 0 0 2 4 6 8 0.8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1.0E+01 1.0E+00 ID=2A 1.0E-01 100 IS (A) RDS(ON) (mΩ) 150 125°C 125°C 1.0E-02 1.0E-03 50 25°C 25°C 1.0E-04 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6601 n-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=15V ID=3.4A 500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 100 0 Crss 0 0 1 2 3 4 5 6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 RDS(ON) limited 20 25 30 TJ(Max)=150°C TA=25°C 15 Power (W) ID (Amps) 15 20 10µs 100µs 1ms 0.1s 10ms 1.0 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C 10.0 5 10 5 1s 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) Z θJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO6601 p-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 -5 Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=-250µA -0.6 ID(ON) On state drain current VGS=-4.5V, V DS=-5V -10 ±100 nA -1.4 V 107 135 VGS=-4.5V, I D=-2A 135 185 mΩ VGS=-2.5V, I D=-1A 195 265 mΩ -1 V -1.35 A Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-2.3A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A TJ=125°C gFS Coss µA -1 VGS=-10V, I D=-2.3A IS Units V TJ=55°C IGSS Static Drain-Source On-Resistance Max VDS=-24V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, V DS=-15V, I D=-2.5A 8 mΩ S -0.85 409 pF 55 pF 42 pF 12 Ω 4.8 nC 1.34 nC Qgd Gate Drain Charge 0.72 nC tD(on) Turn-On DelayTime 13 ns tr Turn-On Rise Time 10 ns tD(off) Turn-Off DelayTime 28 ns tf Turn-Off Fall Time trr Qrr VGS=-10V, VDS=-15V, RL=6Ω, RGEN=6Ω 13 ns Body Diode Reverse Recovery Time IF=-2.5A, dI/dt=100A/µs 26 Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/µs 15.6 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6601, AO6601L P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -5V -10V 15 8 25°C -4V 6 VGS=-3.5V -ID(A) -ID (A) VDS=-5V -4.5V 10 -3V 125°C 4 -2.5V 5 2 -2V 0 0 0 1 2 3 4 5 0 0.5 250 1.5 2 2.5 3 3.5 4 1.6 225 Normalized On-Resistance VGS=-2.5V 200 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 175 150 VGS=-4.5V 125 100 VGS=-10V 75 VGS=-4.5V, VGS=-10V 1.4 VGS=-2.5V 1.2 ID=-2A 1 50 0 1 2 3 4 5 0.8 6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 300 1.0E+00 ID=-2A 1.0E-01 -IS (A) RDS(ON) (mΩ) 200 125°C 150 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 350 250 25 125°C 1.0E-02 1.0E-03 25°C 100 1.0E-04 25°C 1.0E-05 50 1.0E-06 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6601 p-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=-15V ID=-2.0A 500 Capacitance (pF) -VGS (Volts) 4 3 2 1 400 Ciss 300 200 Coss 100 0 0 0 1 2 3 4 5 6 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 10µs 10.0 15 Power (W) 100µs RDS(ON) limited 1ms 0.1s 10ms 1.0 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 5 1s Z θJA Normalized Transient Thermal Resistance 5 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000