A-POWER AP0503GMA

AP0503GMA
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ SO-8 similar area footprint and pin assignment
BVDSS
30V
▼ Low Gate Drive Voltage
RDS(ON)
4.2mΩ
D
▼ Lower On-resistance
ID
75A
▼ RoHS Compliant
G
D
S
Description
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
SS
S G
APAK-5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±12
V
[email protected]=25℃
Continuous Drain Current, VGS @ 4.5V
75
A
[email protected]=100℃
Continuous Drain Current, VGS @ 4.5V
56
A
1
IDM
Pulsed Drain Current
300
A
[email protected]=25℃
Total Power Dissipation
70
W
0.6
W/℃
Linear Derating Factor
4
EAS
Single Pulse Avalanche Energy
29
mJ
IAR
Avalanche Current
24
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
3
Value
Units
Max.
1.8
℃/W
Max.
85
℃/W
200429052-1/4
AP0503GMA
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.018
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=30A
-
-
4.2
mΩ
VGS=4.5V, ID=30A
-
-
6
mΩ
VGS=2.5V, ID=20A
-
-
9
mΩ
0.5
-
1.2
V
VDS=5V, ID=30A
-
88
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=30A
-
52
83
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VDS=VGS, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
21
-
nC
VDS=15V
-
19
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
60
-
ns
tf
Fall Time
RD=0.5Ω
-
115
-
ns
Ciss
Input Capacitance
VGS=0V
-
5130 8200
pF
Coss
Output Capacitance
VDS=25V
-
620
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
360
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.85
1.3
Ω
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
38
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω
2/4
AP0503GMA
150
150
o
5.0V
4.5V
3.5V
2.5V
T C = 1 50 o C
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
100
50
5.0 V
4.5 V
3.5 V
100
2.5V
50
V G = 1.5 V
V G =1.5V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
1.7
I D = 20 A
T c =25 ℃
I D =30A
V G =4.5V
RDS(ON) (mΩ)
Normalized RDS(ON)
12
8
4
1.3
0.9
0.5
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
2.0
Normalized VGS(th) (V)
1.5
4
Is (A)
T j =150 o C
T j =25 o C
2
1.0
0.5
0.0
0
0
0.2
0.4
0.6
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP0503GMA
f=1.0MHz
15
10000
I D =30A
C iss
V DS =15V
V DS =20V
V DS =24V
9
C (pF)
VGS , Gate to Source Voltage (V)
12
1000
C oss
6
C rss
3
100
0
0
30
60
90
120
1
150
6
11
16
21
26
31
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
ID (A)
100
1ms
10
T c =25 o C
Single Pulse
10ms
100ms
DC
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
VG
V DS =5V
ID , Drain Current (A)
80
QG
o
o
T j =25 C
60
T j =150 C
4.5V
QGS
QGD
40
20
Charge
Q
0
0
1
2
3
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4