CYSTEKEC BTD1805J3

CYStech Electronics Corp.
Spec. No. : C820J3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 1/ 4
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805J3
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
• Very low collector-to-emitter saturation voltage
• Fast switching speed
• High current gain characteristic
• Large current capability
Applications
• CCFL drivers
• Voltage regulators
• Relay drivers
• High efficiency low voltage switching applications
Symbol
Outline
BTD1805J3
B:Base
C:Collector
E:Emitter
BTD1805J3
TO-252
B C E
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C820J3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 2/ 4
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
150
60
7
5
10 (Note 1)
2
1
15
125
8.33
150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
ton
tstg
tf
Min.
150
60
7
200
85
20
-
Typ.
200
240
0.9
150
50
50
1.35
120
Max.
0.1
0.1
50
300
400
600
1.2
400
-
Unit
V
V
V
µA
µA
mV
mV
mV
mV
V
MHz
pF
ns
µs
ns
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IC=100µA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
IC=100mA, IB=5mA
IC=2A, IB=50mA
IC=3A, IB=150mA
IC=5A, IB=200mA
IC=2A, IB=100mA
VCE=2V, IC=100mA
VCE=2V, IC=5A
VCE=2V, IC=10A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
VCC=30V, IC=10IB1=-10IB2=1A,
RL=30Ω
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTD1805J3
CYStek Product Specification
Spec. No. : C820J3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 3/ 4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
1000
VCE=2V
VCE=1V
[email protected]=40IB
100
[email protected]=20IB
100
10
1
10
100
1000
10000
1
100
1000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
On Voltage vs Collector Current
10000
1000
On Voltage---(mV)
Saturation Voltage---(mV)
1000
[email protected]=20IB
[email protected]=1V
100
100
1
10
100
1000
10000
1
Collector Current---IC(mA)
10
100
1000
10000
Collector Current---IC(mA)
Power Derating Curve
Power Derating Curve
16
Power Dissipation---PD(W)
1.2
Power Dissipation---PD(W)
10
1
0.8
0.6
0.4
0.2
14
12
10
8
6
4
2
0
0
0
50
100
150
Ambient Temperature---TA(℃)
BTD1805J3
200
0
50
100
150
200
Case Temeprature---TC(℃)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C820J3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 4/ 4
TO-252 Dimension
C
A
Marking:
D
B
D1805
G
F
L
3
H
E
K
2
Style: Pin 1.Base 2.Collector 3.Emitter
I
1
J
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2520 0.2677
0.2125 0.2283
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.40
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
*0.0906
0.0354
0.0315
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
*2.30
0.90
0.80
5.20
5.50
1.40
1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1805J3
CYStek Product Specification