Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2004.06.17 CYStech Electronics Corp. Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501I3 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics Symbol Outline TO-251 BTN3501I3 B：Base C：Collector E：Emitter B B CC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1 1.5 20 83.3 6.25 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. BTN3501I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2004.06.17 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) 1 *VBE(sat) 2 *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 80 200 200 100 - Typ. 0.1 50 130 Max. 10 50 0.3 0.6 1.5 1.2 1.5 400 - Unit V µA µA V V V V V MHz pF Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V,IC=0 IC=2A, IB=200mA IC=8A, IB=400mA IC=5A, IB=50m A IC=2A, IB=200mA IC=8A, IB=800mA VCE=1V, IC=100mA VCE=1V, IC=2A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification of VCE(sat) 3 Rank Range BTN3501I3 KA < 360mV KB 350mV~900mV N 800mV~1500mV CYStek Product Specification Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2004.06.17 CYStech Electronics Corp. Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT) Saturation Voltage---(mV) Current Gain---HFE VCE = 5V VCE = 2V 100 VCE = 1V 10 IC = 40IB 100 10 IC = 10IB 1 1 10 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) Saturation Voltage vs Collector Current Power Derating Curve 10000 1.6 Power Dissipation---PD(W) VBE(SAT) @ IC =10IB Saturation Voltage---(mV) IC = 20IB 1000 100 1.4 1.2 1 0.8 0.6 0.4 0.2 0 1 10 100 1000 10000 Collector Current---IC(mA) 0 50 100 150 Ambient Temperature---TA(℃) 200 Power Derating Curve Power Dissipation---PD(W) 25 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC(℃) BTN3501I3 CYStek Product Specification Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2004.06.17 CYStech Electronics Corp. Page No. : 4/4 TO-251 Dimension A B C Marking: D N3501 F G 3 K E I H 2 1 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 J *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN3501I3 CYStek Product Specification