CYStech Electronics Corp. Spec. No. : C816N3-R Issued Date : 2003.12.18 Revised Date : Page No. : 1/4 Low VCE(sat) PNP Epitaxial Planar Transistor BTB1386N3 Features • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.25V(typ) Applications • Low frequency amplifier • Driver Symbol BTB1386N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol Limits Unit VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg -15 -12 -6 -4 -8 225 556 150 -55~+150 V V V A mW °C/W °C °C Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%. BTB1386N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C816N3-R Issued Date : 2003.12.18 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. -15 -12 -6 200 180 150 - Typ. 250 60 Max. -100 -100 -0.25 820 - Unit V V V nA nA V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-15V VEB=-5V IC=-1A, IB=-50mA VCE=-2V, IC=-20mA VCE=-2V, IC=-500mA VCE=-2V, IC=-2A VCE=-2V, IC=-200mA, f=100MHz VCB=-10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank R S T Range 180~390 270~560 390~820 BTB1386N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C816N3-R Issued Date : 2003.12.18 Revised Date : Page No. : 3/4 Characteristic Curves Current gain vs Collector current Saturation voltage vs Collector current 1000 1000 Current gain---HFE Saturation voltage---(mV) VCE = 2V 100 VCE(sat) 100 IC=40IB 10 IC=10IB 1 1 10 100 1000 Collector current---IC(mA) 10000 1 Saturation votlage vs Collector current 10 100 1000 Collector current---IC(mA) 10000 On voltage vs Collector Current 10000 1000 VBE(sat)@IC=20IB On Voltage---(mV) Saturation Voltage---(mV) IC=20IB 1000 100 100 1 10 100 1000 10000 Collector Current---IC(mA) 1 10 100 1000 Collector Current---IC(mA) 10000 Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 BTB1386N3 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification Spec. No. : C816N3-R Issued Date : 2003.12.18 Revised Date : Page No. : 4/4 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B TE BH S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1386N3 CYStek Product Specification