CYSTEKEC BTD2098N3

Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2004.07.01
Page No. : 1/4
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2098N3
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386N3
Symbol
Outline
BTD2098N3
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
VCBO
VCEO
VEBO
IC
ICP
Pd
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
RθJA
Tj
Tstg
Limits
Unit
40
20
7
5
8 (Note )
225
556
150
-55~+150
V
V
V
A
A
mW
°C/W
°C
°C
Note : Single Pulse Pw≦350µs, Duty≦2%.
BTD2098N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2004.07.01
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
20
7
230
150
-
Typ.
0.35
150
Max.
0.1
1
0.1
1.0
800
50
Unit
V
V
µA
µA
µA
V
MHz
pF
Test Conditions
IC=1mA, IB=0
IE=10µA, IC=0
VCB=10V, IE=0
VCB=10V, IE=0
VEB=7V,IC=0
IC=3A, IB=0.1A
VCE=2V, IC=500mA
VCE=2V, IC=2.00A
VCE=6V, IE=50mA, f=200MHz
VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE1
Rank
Range
BTD2098N3
Q
230~380
R
340~600
S
400~800
CYStek Product Specification
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2004.07.01
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
1000
Current Gain---HFE
Saturation Voltage-(mV)
VCE(SAT)@IC=30IB
100
[email protected]=2V
10
100
1
10
100
1000
1
10000
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
Cutoff Frequency vs Collector Current
1000
250
Power Dissipation---PD(mW)
CutoffF Frequency---FT(MHZ)
[email protected]=6V
100
200
150
100
50
0
1
10
Collector Current---IC(mA)
BTD2098N3
10
100
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2004.07.01
Page No. : 4/4
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
A
L
3
B
TE
AH
S
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
Style: Pin 1.Base 2.Emitter 3.Collector
D
K
H
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2098N3
CYStek Product Specification