CYSTEKEC BTD2118J3

Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 1/4
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2118J3
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A
• Excellent current gain characteristics
• Complementary to BTB1412J3
Symbol
Outline
BTD2118J3
TO-252
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation(TA=25℃)
Power Dissipation(TC=25℃)
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
ICP
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
50
20
6
5
10
1
10
150
-55~+150
V
V
V
*1
*2
A
W
°C
°C
Note : *1. Single Pulse , Pw≦380µs,Duty≦2%.
*2. When mounted on a 40*40*0.7mm ceramic board.
BTD2118J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
50
20
6
120
-
Typ.
0.35
150
35
Max.
0.5
0.5
1
560
-
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
IC=4A, IB=0.1A
VCE=2V, IC=0.5A
VCE=6V, IC=50mA, f=100MHz
VCB=20V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
BTD2118J3
Q
120~270
R
180~390
S
270~560
CYStek Product Specification
Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
1000
[email protected]=20IB
Current Gain--- HFE
Saturation Voltage-(mV)
[email protected]=2V
100
10
1
100
1
10
100
1000
10000
0.1
Collector Current---IC(mA)
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
VBE(SAT)@IC=20IB
Saturation Voltage-(mV)
Saturation Voltage-(mV)
VCE(SAT)@IB=40IB
100
10
1
1
10
100
1000
10000
1000
100
1
10
Collector Current---IC(mA)
10000
Power Derating Curve
12
Power Dissipation---PD(W)
1.2
Power Dissipation---PD(W)
1000
Collector Current---IC(mA)
Power Derating Curve
1
0.8
0.6
0.4
0.2
0
10
8
6
4
2
0
0
50
100
150
Ambient Temperature---TA(℃ )
BTD2118J3
100
200
0
50
100
150
200
Case Temperature---TC(℃)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 4/4
TO-252 Dimension
C
A
Marking:
D
B
D2118
G
F
L
3
H
E
K
2
Style: Pin 1.Base 2.Collector 3.Emitter
I
1
J
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2520 0.2677
0.2125 0.2283
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.40
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
*0.0906
0.0354
0.0315
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
*2.30
0.90
0.80
5.20
5.50
1.40
1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2118J3
CYStek Product Specification