CYSTEKEC BTP3906N3

CYStech Electronics Corp.
Spec. No. : C318N3-H
Issued Date : 2002.06.11
Revised Date : 2005.01.12
Page No. : 1/4
General Purpose PNP Epitaxial Planar Transistor
BTP3906N3
Description
• Complementary to BTN3904N3.
Symbol
Outline
BTP3906N3
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25°C)
Power Dissipation (TC=25°C)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
-40
-40
-5
-200
225 (Note)
560
556 (Note)
223
150
-55~+150
Unit
V
V
V
mA
mW
mW
°C/W
°C/W
°C
°C
Note : Free air condition
BTP3906N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C318N3-H
Issued Date : 2002.06.11
Revised Date : 2005.01.12
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*hFE
*hFE
*hFE
*hFE
*hFE
fT
Cob
Min.
-40
-40
-5
-0.65
60
80
100
60
30
250
-
Typ.
-0.05
-0.12
-0.76
-0.88
-
Max.
-50
-50
-0.25
-0.4
-0.85
-0.95
300
4.5
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=-10µA
IC=-1mA
IE=-10µA
VCE=-30V, VBE=3V
VEB=-4V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-100µA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
BTP3906N3
CYStek Product Specification
Spec. No. : C318N3-H
Issued Date : 2002.06.11
Revised Date : 2005.01.12
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCE(SAT)@IC=10IB
Saturation Voltage-(mV)
Current Gain---HFE
[email protected]=1V
100
10
100
10
0.1
1
10
100
1000
0.1
1
10
Collector Current--- IC(mA)
Collector Current IC-(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
10000
1000
1000
VBE(SAT)@IC=10IB
VCE=20V
Cutoff Frequency(MHz)
Saturation Voltage-(mV)
100
1000
100
100
0.1
1
10
100
1000
1
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTP3906N3
CYStek Product Specification
Spec. No. : C318N3-H
Issued Date : 2002.06.11
Revised Date : 2005.01.12
Page No. : 4/4
CYStech Electronics Corp.
SOT-23 Dimension
A
Marking:
L
3
B
2A
TE
S
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
Style: Pin 1.Base 2.Emitter 3.Collector
D
K
H
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP3906N3
CYStek Product Specification