CYSTEKEC MTN2302N3

Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22
Page No. : 1/5
CYStech Electronics Corp.
. .
20V N-CHANNEL Enhancement Mode MOSFET
MTN2302N3
Features
• VDS=20V
RDS(ON)[email protected]=4.5V, IDS=3.6A
RDS(ON)[email protected]=2.5V, IDS=3.1A
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
Equivalent Circuit
Outline
MTN2302N3
SOT-23
D
S
G
G:Gate
S:Source
D:Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta=25℃
Ta=75℃
Operating Junction Temperature
Storage Temperature
MTN2302N3
Symbol
Limits
Unit
VDS
VGS
ID
IDM
20
±8
2.4
10
1.25
V
V
A
A
PD
Tj
Tstg
0.8
-55~+150
-55~+150
W
°C
°C
CYStek Product Specification
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22
Page No. : 2/5
CYStech Electronics Corp.
. .
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Lead Temperature, for 5 second Soldering(1/8” from case)
Symbol
Limit
Unit
Rth,ja
TL
100
260
°C/W
°C
Note : Surface mounted on FR-4 board, t≦5sec.
Electrical Characteristics (Ta=25°C)
Symbol
Static
BVDSS
VGS(th)
IGSS/F
IGSS/R
IDSS
*ID(ON)
*RDS(ON)
Min.
Typ.
Max.
Unit
20
0.45
6
-
50
75
10
100
-100
1
65
95
-
V
V
nA
nA
µA
A
450
70
43
7
55
16
10
5.2
0.65
1.5
15
80
60
25
10
-
0.75
1.6
1.2
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
ISD
VSD
-
Test Conditions
S
VGS=0, ID=250µA
VDS=VGS, ID=250µA
VGS=+8V, VDS=0
VGS=-8V, VDS=0
VDS=20V, VGS=0
VDS=5V, VGS=4.5V
ID=3.6A, VGS=4.5V
ID=3.1A, VGS=2.5V
VDS=5V, ID=3.6A
pF
VDS=10V, VGS=0, f=1MHz
ns
VDD=10V, ID=1A, RL=10Ω
VGEN=4.5V, RG=6Ω
nC
VDS=10V, ID=3.6A,
VGS=4.5V,
A
V
VGS=0V, ISD=1A
mΩ
*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%
MTN2302N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22
Page No. : 3/5
. .
Characteristic Curves
MTN2302N3
CYStek Product Specification
CYStech Electronics Corp.
MTN2302N3
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22
Page No. : 4/5
. .
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22
Page No. : 5/5
. .
SOT-23 Dimension
Marking:
A
L
3
B
TE
02
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Gate 2.Source 3.Drain
C
D
K
H
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2302N3
CYStek Product Specification