CYSTEKEC MTN7000A3

Spec. No. : C325A3
Issued Date : 2004.02.13
Revised Date :
. .
Page No. : 1/4
CYStech Electronics Corp.
N-CHANNEL MOSFET
MTN7000A3
Description
The MTN7000A3 is a N-channel enhancement-mode MOSFET.
Symbol
Outline
MTN7000A3
TO-92
G:Gate
S:Source
D:Drain
SGD
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Drain-Gate Voltage (RGS=1MΩ)
VDSS
VDGR
60
60
V
V
Gate-Source Voltage
---Continuous
---Non–repetitive(tp ≤50µs)
VGS
VGSM
±20
±40
V
V
ID
ID
IDM
200
130
500
400
3.2
-55~+150
-55~+150
312.5
260
mA
mA
mA
mW
mW/°C
°C
°C
°C/W
°C
Continuous Drain Current (Ta=25°C)
Continuous Drain Current (Ta=100°C)
Pulsed Drain Current (Ta=25°C)
Total Power Dissipation (Ta=25°C)
Derate Above 25°C
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient
Lead Temperature, for 10 second Soldering
Pd
Tj
Tstg
Rth,ja
TL
*1
Note : *1. Pulse Width ≤ 300µs, Duty cycle ≤2%
MTN7000A3
CYStek Product Specification
Spec. No. : C325A3
Issued Date : 2004.02.13
Revised Date :
. .
Page No. : 2/4
CYStech Electronics Corp.
Electrical Characteristics (Ta=25°C)
Symbol
BVDSS
VGS(th)
IGSS/F
IGSS/R
IDSS
ID(ON)
Min.
60
0.8
Typ.
Max.
3
10
-10
1
75
5.3
5
60
25
5
RDS(ON)
GFS
Ciss
Coss
Crss
100
-
-
Unit
V
V
nA
nA
µA
mA
mS
Test Conditions
VGS=0, ID=10µA
VDS=VGS, ID=1.0mA
VGS=+15V, VDS=0
VGS=-15V, VDS=0
VDS=48V, VGS=0
VDS=10V, VGS=4.5V
ID=75mA, VGS=4.5V
ID=75mA, VGS=10V
VDS=10V, ID=200mA
pF
VDS=25V, VGS=0, f=1MHz
Ω
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Characteristic Curves
TYPICAL OUTPUT CHARACTERISICS
TYTICAL TRANSFER CHARACTERISTIC
1.4
1.4
VGS=8V
1.2
1.0
DRAIN CURRENT---ID(A)
DRAIN CURRENT---ID(A)
1.2
VGS=5V
0.8
VGS=4V
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0
1
2
3
4
5
6
7
DRAIN-SOURCE ---VDS(V)
MTN7000A3
8
9
10
0
1
2
3
4
5
6
7
8
9
10
GAT E-SOURCE VOLT AGE---VGS(V)
CYStek Product Specification
Spec. No. : C325A3
Issued Date : 2004.02.13
Revised Date :
. .
Page No. : 3/4
CYStech Electronics Corp.
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
VS GATE-SOURCE VOLTSAGE
10
3.5
9
VGS=5V
3.0
2.5
2.0
VGS=10V
1.5
1.0
0.5
RESISTANCE--- RDS(on)(ohm)
4.0
STATIC DRAIN-SOURCE ON-STATE
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE--- RDS(on)(ohm)
ST AT IC DRAIN-SOURCE ON-ST AT E
RESIST ANCE vs DRAIN CURRENT
8
7
6
5
ID=115mA
4
ID=57.5m
A
3
2
1
0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
DRAIN CURRENT ---ID(A)
REVERSE DRAIN CURRENT---IDR(A)
FORWARD TRANSFER ADMITTANCE--GFS(ms)
20
1.00
VGS=10V
100
10
1
0.001
0.01
0.1
Pulsed
0.10
VGS=10V
0.01
0.00
1
SWIT CHING
VGS=0V
0.50
1.00
1.50
SOURCE-DRAIN VOLT AGE---VSD(V)
DRAIN CURRENT ---ID(A)
CHARACT ERIST ICS
POWER DERATING CURVE
1000
0.45
POWER DISSIPATION--PD(W)
SWITCHING TIMES---(ns)
15
REVERSE DRAIN CURRENT vs SOURCEDRAIN VOLTAGE
1000
Tf
T d(off)
T d(on)
10
Tr
1
0.001
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0.01
0.1
DRAIN CURRENT ---ID(A)
MTN7000A3
10
GAT E-SOURCE VOLT AGE---VGS(V)
FORWARD TRANSFER ADM ITTANCE
vs DRAIN CURRENT
100
5
1
0
50
100
150
200
AMBIENT TEMPERATURE---Ta(℃)
CYStek Product Specification
Spec. No. : C325A3
Issued Date : 2004.02.13
Revised Date :
. .
Page No. : 4/4
CYStech Electronics Corp.
TO-92 Dimension
α2
A
Marking:
B
1
2
2N7000
3
α3
C
D
H
I
G
Style: Pin 1.Source 2.Gate 3.Drain
α1
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
E
F
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7000A3
CYStek Product Specification