FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 4.16 W Total Power Dissipation Tc = 25°C Pt Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with gate resistance of 400Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 300 450 mA Transconductance gm VDS = 5V, IDS = 200mA - 150 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 15mA -1.0 -2.0 -3.5 V -5 - - V 28.5 29.5 - dBm 12.5 13.5 - dB - 47 - % - 25 36 °C/W Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Power-added Efficiency ηadd Thermal Resistance Rth IGS = -15µA VDS = 10V IDS ≈ 0.6IDSS (Typ.), f = 2.3GHz Channel to Case CASE STYLE: ME Edition 1.1 July 1999 G.C.P.: Gain Compression Point 1 FLL107ME L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Drain Current (mA) 4 3 2 1 VGS =0V 300 -0.5V 200 -1.0V 100 -1.5V -2.0V 50 100 150 0 200 2 4 6 8 10 Drain-Source Voltage (V) Case Temperature (°C) OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.6IDSS f = 2.3 GHz 30 50 28 Pout 26 40 24 30 22 20 ηadd 20 10 8 10 12 14 16 Input Power (dBm) 2 18 ηadd (%) 0 Output Power (dBm) Total Power Dissipation (W) 5 FLL107ME L-Band Medium & High Power GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 0.5 GHz 1 +j250 5 +j10 4 5 3 2 4 0.5 GHz 1 4.5 4 3.5 0 25 10 3 50Ω 100 180° 250 8 6 4 0° 2 SCALE FOR |S21| SCALE FOR |S12| 2.5 0.5 GHz 2 -j10 5 2 5 1.5 -j250 1 4 3 1.5 2.5 2 1 -j25 0.5 GHz -j100 ANG S-PARAMETERS VDS = 10V, IDS = 180mA S21 S12 MAG ANG MAG ANG S11 MAG .04 .06 .08 -90° -j50 FREQUENCY (MHZ) .02 S22 MAG ANG 500 .935 -81.9 8.704 135.4 .021 54.0 .404 -43.3 1000 .884 -121.5 5.761 114.2 .028 41.9 .408 -67.9 1500 .866 -143.2 4.260 104.9 .029 40.4 .443 -84.0 2000 .854 -157.4 3.368 98.0 .029 44.2 .494 -96.8 2500 .842 -167.6 2.823 94.2 .031 50.9 .545 -106.5 3000 .829 -176.8 2.526 92.3 .027 59.2 .585 -114.5 3500 .803 175.1 2.207 87.4 .033 64.1 .622 -121.9 4000 .761 166.3 2.350 87.7 .035 68.4 .651 -127.3 4500 .687 155.0 2.233 77.2 .039 67.5 .688 -132.7 5000 .554 138.8 2.436 70.3 .050 72.2 .699 -140.7 Download S-Parameters, click here 3 FLL107ME L-Band Medium & High Power GaAs FET 2.0 Min. (0.079) Case Style "ME" Metal-Ceramic Hermetic Package 5.0 (0.197) 2-Ø2.2±0.15 (0.098) +0.1 5.0 -0.15 (0.197) 1 4 3 2 0.1±0.05 (0.004) 2.0 Min. (0.079) 1.0±0.15 (0.039) 16.0±0.15 (0.630) 1.65±0.2 (0.065) 12.0±0.15 (0.472) 1.2 (0.048) 4.0 Max. (0.157) 9.0 (0.354) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4