Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier RoHS Compliant Pb & Green Package These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2500 MHz Cellular, ISM, WLL, PCS & W-CDMA applications. It’s high linearity makes it an ideal choice for multi-carrier as well as digital applications. Typical IP3, P1dB, Gain 50 45 40 35 30 25 20 15 10 5 0 IP3 IP3 P1dB Gain Product Features IP3 • • • • • • P1dB P1dB Gain Gain High OIP3: +43dBm at 1960 MHz P1dB: 24dBm High Linearity/ACP Performance Robust 2000V ESD, Class 2 SOT-89 package MSL 1 moisture rating Applications 880 MHz 1960 MHz Symbol • PA Driver Amplifier • IF Amplifier • Cellular, PCS, ISM, WLL, W-CDMA 2140 MHz Parameters Units Min. Typ. dBm 450 MHz 880 MHz 1960 MHz 2140 MHz 24.1 24.5 24.2 24.7 dBm 450 MHz 880 MHz 1960 MHz 2140 MHz 25 23 17 17 Input VSWR 450 MHz 880 MHz 1960 MHz 2140 MHz 1.1:1 1.3:1 1.4:1 1.3:1 Noise Figure dB 450 MHz 880 MHz 1960 MHz 2140 MHz 4.9 4.3 4.3 4.2 OIP3 Third Order Intercept Point (Pout/tone = +11dBm, Tone spacing = 1MHz) dBm 450 MHz 880 MHz 1960 MHz 2140 MHz 40 41 43 43 ACP Channel Power IS-95 at 450/880/1960MHz, -55dBc ACP WCDMA at 2140MHz, -50dBc ACP dBm 450 MHz 880 MHz 1960 MHz 2140 MHz 16 16.3 15.5 15.6 P1dB Output Power at 1 dB Compression S21 Small Signal Gain S11 NF ID Device Current mA Test Conditions: RTH, j-l Test Conditions: Thermal Resistance @ 85C (junction - lead) Ta = 25°C Vs = 8V Rbias = 20 Ohms Vdevice = 5.2V °C/W 120 135 Max. 150 51.3 ZO = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104625 Rev B Preliminary SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier Absolute Maximum Ratings Absolute Limit Max Device Current (IDQ) 190mA Max Device Voltage (VD) 6V Max. RF Input Power +20 dBm Max. Operating Dissipated Power (quiescent) 1.0 W Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C DCIV over Temperature (with App. Circuits) 250 200 Id (25C) Id (mA) Parameter 150 Id (-40C) Id (85C) 100 50 0 Test Conditions: Operation of this device beyond any one of these limits may cause 0 2 4 6 8 Noise Figure (with Application Circuits) 6 25C 85C 5 MSL (Moisture Sensitivity Level) Rating: Level 1 NF (dB) ESD Class 2, 2000V HBM Appropriate precautions in handling, packaging and testing devices must be observed. 10 Voltage (V) permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD 4 3 2 1 0 450 MHz 880 MHz 1960 MHz 2140 MHz Simplified Device Schematic with ESD diodes Narrowband App. Ckt. Vc/Output Input Narrowband App. Ckt. Gnd 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104625 Rev B Preliminary SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier 880 MHz Application Circuit Data, ID=135mA, T=+25C, RBias=20 Ohm, VS=8V P1dB vs. Frequency 26 26 -45 25 25C -50 25 ACP (dB) P1dB (dBm) ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 880MHz) -40 24 24 -40C 85C -55 -60 25C 23 23 22 850 -65 -40C 85C 860 870 880 -70 890 900 -75 910 10 Frequency (MHz) 11 12 13 14 15 16 17 18 19 Channel Power (dBm) Input/Output Return Loss, Isolation vs. Frequency, T=25C S21 over Temperature 28 0 26 S11 -5 S12 S22 24 -15 22 dB Gain (dB) -10 25C -40C 20 860 870 880 -25 -30 85C 18 850 -20 -35 890 900 -40 850 910 860 870 Frequency (MHz) OIP3 vs. Freq. (11dBm Output Tones) 900 910 OIP3 vs. Tone Power @880MHz 44 44 42 42 40 25C 38 -40C 85C 36 34 850 890 46 OIP3 (dBm) OIP3 (dBm) 46 880 Frequency (MHz) 40 38 25C 36 -40C 85C 34 860 870 880 890 900 910 2 4 6 8 10 12 14 16 Pout per tone (dBm) Frequency (MHz) 450 MHz & 2140MHz Application Circuits available in Application Note AN-078 at www.sirenza.com 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104625 Rev B Preliminary SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier 1960 MHz Application Circuit Data, ID=135mA, T=+25C, RBias=20 Ohm, VS=8V P1dB vs. Frequency 26 ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 1960MHz) -40 26 -45 25C -50 25 ACP (dB) P1dB (dBm) 25 24 24 25C -60 -65 23 -40C 23 85C 22 1930 -40C 85C -55 -70 -75 1940 1950 1960 1970 1980 10 1990 11 12 13 14 15 16 17 18 19 Channel Power (dBm) Frequency (MHz) Input/Output Return Loss, Isolation vs. Frequency, T=25C S21 over Temperature 22 0 -5 20 -10 -15 -20 16 dB Gain (dB) 18 25C 14 12 1930 1940 1950 -25 -40C -30 85C -35 1960 1970 1980 S11 S12 S22 -40 1930 1990 1940 44 44 42 42 IP3 (dBm) OIP3 (dBm) 46 40 25C -40C 34 1930 1970 1980 1990 40 25C 38 -40C 85C 36 1960 OIP3 vs. Tone Power @1960MHz OIP3 vs. Freq. (11dBm Output Tones) 46 38 1950 Frequency (MHz) Frequency (MHz) 36 85C 34 1940 1950 1960 1970 1980 1990 Frequency (MHz) 2 4 6 8 10 12 14 16 Pout per tone (dBm) 450 MHz & 2140MHz Application Circuits available in Application Note AN-078 at www.sirenza.com 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-104625 Rev B Preliminary SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier Application Schematic & Assembly Drawing 880MHz Circuit Note: Electrical lengths 50Ω, 4.6° 50Ω, 9.8° 50Ω, 3.1° 50Ω, 2.3° 50Ω, 6.7° 50Ω, 4.2° 50Ω, 2.9° 50Ω, 2.9° 50Ω, 4.2° 50Ω, 3.3° 50Ω, 3.9° 50Ω, 2.3° 50Ω, 9.1° Ζ10 Ζ5 68Ω 3.3Ω Ζ3 Ζ9 Ζ6 Ζ11 Ζ12 1.5nH 5.6pF Ζ8 RF In Ζ2 10nH SXB-2089Z Ζ7 Ζ1 1.0uF Tantalum 1200pF 82nH 22pF 20Ω 180Ω Ζ4 Ζ1 Ζ2 Ζ3 Ζ4 Ζ5 Ζ6 Ζ7 Ζ8 Ζ9 Ζ10 Ζ11 Ζ12 Ζ13 are determined from the center of a shunt component and a cut on the center trace Ζ13 1.8pF 68pF RF Out 1ΚΩ 1200pF + Bill of Materials 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 C1 TAJB105KLRH Rohm 1.0uF C2,C5 MCH185C122KK Rohm 1200pF C3 MCH185A680JK Rohm 68pF C4 MCH185A1R8CK Rohm 1.8pF C6 MCH185A5R6DK Rohm 5.6pF C7 MCH185A220JK Rohm 22pF L1 LL1608-FS10NJ Toko 10nH L2 LL1608-FS1N5S Toko 1.5nH L3 LL1608-FSR82NJ Toko 82nH R1 20Ω 2515 res (1%) R2 180Ω 0603 res (5%) R3 68Ω 0603 res (5%) R4 3.3Ω 0603 res (5%) R5 1KΩ 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-101407 PCB ECB-102925-B http://www.sirenza.com EDS-104625 Rev B Preliminary SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier Application Schematic & Assembly Drawing 1960MHz Circuit Note: Electrical lengths 50Ω, 15.9° 50Ω, 7.0° 50Ω, 6.2° 50Ω, 6.8° 50Ω, 5.1° 50Ω, 14.9° 50Ω, 9.3° 50Ω, 6.4° 50Ω, 6.4° 50Ω, 9.3° 50Ω, 7.3° 50Ω, 8.6° 50Ω, 10.0° 50Ω, 15.4° RF In Ζ11 Ζ6 27nH Ζ2 1.8pF 3.6Ω Ζ3 Ζ4 10nH SXB-2089Z Ζ10 Ζ7 2.7pF Ζ12 Ζ13 1.2nH Ζ9 4.7pF 1.0uF Tantalum 1200pF 68Ω Ζ8 Ζ1 20Ω 180Ω Ζ5 Ζ1 Ζ2 Ζ3 Ζ4 Ζ5 Ζ6 Ζ7 Ζ8 Ζ9 Ζ10 Ζ11 Ζ12 Ζ13 Ζ14 are determined from the center of a shunt component and a cut on the center trace 1200pF Ζ14 1.2pF 12pF RF Out 1.5ΚΩ + Bill of Materials 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 C1 TAJB105KLRH Rohm 1.0uF C2,C5 MCH185C122KK Rohm 1200pF C3 MCH185A120JK Rohm 12pF C4 MCH185A1R2CK Rohm 1.2pF C6 MCH185A1R8CK Rohm 1.8pF C7 MCH185A4R7CK Rohm 4.7pF C8 MCH185A2R7CK Rohm 2.7pF L1 LL1608-FS10NJ Toko 10nH L2 LL1608-FS1N2S Toko 1.2nH L3 LL1608-FS270JK Toko 27nH R1 20Ω 2512 res (1%) R2 180Ω 0603 res (5%) R3 68Ω 0603 res (5%) R4 3.6Ω 0603 res (5%) R5 1.5KΩ 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-101407 PCB ECB-102925-B http://www.sirenza.com EDS-104625 Rev B Preliminary SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier Suggested PCB Pad Layout Dimensions in inches [millimeters] Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor and matching components chosen for the frequency of operation. 2,4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 3 Description RF OUT/ RF output pin. This pin requires the use of an external DC blocking capacitor, BIAS choke and matching components as shown in the Application Schematic. Package Marking 4 Devices / Reel SXB-2089Z 7" 1000 1 2 3 Reel Size 1 Part Number 2 XB2Z Part Number Ordering Information 3 Package Dimensions (Refer to Application Note AN075 at www.sirenza.com) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-104625 Rev B